1.
The first order forbidden energy?band width is the biggest when cylindrical radius is about 40 ?.
圆柱半径在40 左右时,第一禁带宽度最大。
2.
1. For a certain apodization function, the band width, steepness of the band
1. 对于同一切趾函数，光栅反射谱的禁带宽度、禁带边缘陡峭性和旁瓣
3.
Silicon and germanium, for instance, have forbidden bands whose widths are 1.1 and 0.65eV, respectively.
例如，硅和锗的禁带宽度分别为1．1电子伏和0．65电子伏。
4.
Study of Transparent Conducting CdO Thin Films with a Tunable Band-gap Deposited on Organic Substrates;
有机衬底上沉积禁带宽度可调的CdO透明导电薄膜
5.
The films made at different aging time with same dip times have the same direct transition bandgaps.
在不同陈化时间,浸渍相同次数制得的膜具有相同的直接跃迁禁带宽。
6.
The methods of bandwidth increasment and the problems of one-dimensional photonic crystal omnidirectionsl reflector are discussed.
讨 论了增加禁带宽度的方法及一维光子晶体全角度反射镜中存在的问题。
7.
Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films.
结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。
8.
All the films have the same indirect transition bandgap, but those with one time dip have no indirect transition.
除浸渍一次的膜不存在间接跃迁外,所有的膜具有相同的间接跃迁禁带宽。
9.
First-Principles Investigation on Peristylapolyenes and the Narrow of Band Gap of Anatase TiO_2 by N-doping;
盆烯分子与N掺杂锐钛矿型TiO_2体系所致的禁带宽度变窄现象的第一性原理研究
10.
Widening of PBG in 1D Photonic Crystal and Design of Filter;
一维光子晶体禁带扩宽及滤波器设计
11.
Design of a GaN HEMT Class F Power Amplifier
宽禁带GaN HEMT F类功率放大器设计
12.
Studies of Impurities in a Wide Band Semiconductor SiC
宽禁带SiC材料中杂质的分析研究
13.
Preparation and Doping of Wide Band Gap Cubic Boron Nitride Films;
宽禁带立方氮化硼薄膜的制备与掺杂研究
14.
Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations
宽禁带半导体In_2O_3结构和性能的第一性原理研究
15.
Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors
宽禁带半导体日盲紫外探测器研究进展
16.
Recent Development and Future Perspective of Silicon Carbide Power Devices--Opportunity and Challenge
宽禁带半导体SiC功率器件发展现状及展望
17.
Fabrication of Wide-band Semiconductor Nanostructures and Study of Its Field Emission Application;
宽禁带半导体纳米结构制备及其场发射应用研究
18.
Study of ZnO & GaN Wide Band-gap Semiconductors: Microstructure Modulation and Property Characterization
宽禁带半导体ZnO、GaN及其相关材料的微结构调控与性能研究