1) ITO film
ITO膜
1.
The ITO films with resistivity below 2×10 -4 Ω·cm and visible light transmissivity beyond 80% were obtained.
所镀制的ITO膜电阻率已降到 <2× 10 - 4Ω·cm ,可见光透过率达 80 %以上。
2.
In this study, Pb~+ ions were injected into the ITO film on glass by ion-implantation technology.
采用离子注入技术将铅离子注入到ITO薄膜玻璃中,用分光光度计、四探针测试仪、硬度计等测定了ITO膜注入前后的光学性能、电学性能、机械性能和化学德定性。
3.
This paper described investigation of the transparency and electroconductive mechanism of semiconductive oxide ITO film,use reactive direct current magnetic control sputting coating process,to coating an ITO film on the acrylic glass at lower temperature.
通过探讨半导体氧化物ITO膜的透光和导电机理,用反应性直流磁控溅射的镀膜工艺,在有机玻璃上低温镀制(ITO)膜,研究ITO膜溅射工艺参数与透光和导电性能的关系,实现了在低温下镀制(ITO)膜的技术,其透光率≥80%以上,表面电阻≤30Ω/□。
2) ITO films
ITO膜
1.
The resistivity of ITO films was minimised by optimizing the tin doping concentration in the solution.
以铟、锡氯化物为前驱物,采用溶胶-凝胶法在玻璃基体上制备不同锡掺杂的ITO膜,在热处理温度为450℃条件下制备不同锡掺杂(质量分数11%~33%)的ITO膜,研究锡掺杂对ITO膜方阻和结构特性的影响。
2.
Transparent and conductive ITO films had been prepared by the sol gel process, and the effects of every factor on the optical and electrical properties of the files had been investigated during the process.
采用溶胶 凝胶方法制备ITO膜 ,并从制备工艺上研究了各种因素对ITO膜光电特性的影响 最后制出的ITO膜厚度约为 5 0nm ,在可见光区平均透射比达 97% ,最高达 99。
3.
The advantages of the technique include higher quality ITO films growth, stronger (3.
与未经在线等离子体清洗的基片沉积的ITO膜相比 ,膜层附着力提高了 3。
3) ITO films
ITO薄膜
1.
Transparent conductive ITO films (5 wt%~20wt% Sn-doped) were fabricated on soda lime float glass substrate by a colloid technique.
以金属铟和锡盐为原料采用胶体法制备Sn掺杂三氧化二铟(ITO)前驱物浆料,通过提拉法在镀有SiO2薄层的浮法玻璃基片上制备透明导电ITO薄膜。
2.
High quality ITO films were deposited on glass substrates by sol-gel method in the solution composed of indium metal(In) and stannic chloride (SnCl 4·5H 2O).
以In金属和SnCl4·5H2 O作为原材料 ,采用溶胶一凝胶法在玻璃基体上制备了高质量的ITO薄膜 ,并分析了Sn掺杂时、热处理温度、热处理时间三种工艺参数对ITO薄膜电学性能的影响 ,确定了ITO薄膜的相组
3.
Zirconium-doped ITO films were deposited on glass substrate by co-sputtering technology with two targets.
利用双靶共溅法在玻璃衬底上沉积了Zr掺杂ITO薄膜,对比研究了在不同氧流量下ITO和ITO∶Zr薄膜性能的变化。
4) ITO film
ITO薄膜
1.
Influence of nitrification methods upon optical and electrical properties of ITO films;
氮化处理对ITO薄膜光电特性影响
2.
Experimental studies on thermal shielding and saving energy of the coated ITO film for automobile front windshield;
汽车前挡风玻璃用ITO薄膜的隔热及节能实验研究
3.
The experimental results showed that it is absolutely feasible to fabricate ITO film on the quartz matrix by sol-gel techni.
ITO薄膜具有由多个粒子堆积而成的多孔微观结构,其晶体结构为立方锰铁矿结构,[111]为明显的择优取向,经过5次镀膜后其厚度在150nm以下,薄膜的方电阻为110Ω,其电阻率约为1。
5) ITO thin films
ITO薄膜
1.
Progress in preparation of ITO thin films by Sol-Gel process;
溶胶-凝胶法制备ITO薄膜研究进展
2.
The XRD, SEM and EDS are used to characterize the ITO thin films.
以铟锡氯化物为原料,采用水热法在玻璃基片上制备了氧化铟锡(ITO)薄膜,并利用X射线衍射 (XRD)、能谱分析(EDS)、扫描电子显微镜(SEM)等手段对薄膜的相结构、化学组成及形貌进行了表征,研究了水热温度和时间等条件对ITO薄膜光吸收特性的影响。
3.
The phase composition and morphology properties of ITO thin films were characterized by the techniques of X-ray diffraction(XRD)and scanning electron microscope(SEM).
结果表明,采用溶胶-凝胶旋涂法制备的ITO薄膜是由立方相纳米颗粒构成,随涂层增加,薄膜表面变得平滑。
6) ITO thin film
ITO薄膜
1.
The article pointsed out the manufacturing way of Indium-methyl-ethyl-diketone which was important raw material of ITO thin film.
介绍了ITO薄膜重要原料乙酰丙酮铟的制备方法,乙酰丙酮铟一次合成产率99·8%,产品纯度99·95%。
2.
The article points out way manufacturing Indium-methyl-ethyl-diketone which is important raw material of ITO thin film,the controlled condition is as that:organic multi-acid density 8.
介绍ITO薄膜重要原料乙酰丙酮铟的制备方法,制备条件:有机多元酸浓度8。
3.
Several methods of the preparation of ITO thin film with sol-gel technique were introduced.
介绍了几种用溶胶 凝胶法制备ITO薄膜的工艺方法 ,用其中一种无机的方法成功制备了ITO透明导电膜。
补充资料：Ito导电膜玻璃
ito导电膜玻璃
ito导电膜玻璃
氧化铟锡(indium-tin oxide)透明导电膜玻璃,多通过ito导电膜玻璃生产线,在高度净化的厂房环境中,利用平面磁控技术,在超薄玻璃上溅射氧化铟锡导电薄膜镀层并经高温退火处理得到的高技术产品。
产品广泛地用于液晶显示器(lcd)、太阳能电池、微电子ito导电膜玻璃、光电子和各种光学领域。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。