1) dislocation configuration
位错组态
1.
The dislocation configuration of FeCrNi alloy at different temperature and different strain rate was observed using HITACHI H-700H TEM,and the relationship between dislocation behavior,temperature and strain rate was discussed.
利用透射电镜观察了不同温度及不同应变速率下FeCrNi合金的位错组态,分析了位错组态与温度及应变速率的关系。
2.
Different dislocation configurations were formed in twins with different widths.
对孪晶铜进行塑性应变幅控制下的疲劳实验,研究了不同宽度的孪晶内疲劳位错组态及演化过程。
3.
The result shows that, the circular deformation behavior of two-phase steel not only relates to the evolutional process of the dislocation configuration of the microstructure, but also is affected by the intensity, type and loading modes of the circular load.
结果表明 ,双相钢的循环变形行为 ,不仅与组织中位错组态的演变过程有关 ,同时也受循环载荷大小、类型以及加载方式所影响。
2) dislocation pattern
位错组态
1.
The dislocation pattern evolution and crack nucleation in a fatigued copper bicrystal with perpendicular grain boundary (GB) have been investigated by electron channelling contrast (ECC) technique in SEM.
采用电子通道衬度技术对垂直晶界Cu双晶在疲劳过程中位错组态的演化与裂纹的形核进行了研究,结果表明,形变带中墙结构的间距从形成之初到疲劳裂纹出现始终保持恒定;穿晶裂纹与沿晶裂纹尖端的位错组态均为胞结构;裂纹优先从形变带产生。
2.
Combing with the surface slip morphology and dislocation patterns, effects of the embedded grain and the surrounding grain boundary on cyclic deformation of bicrystal were discussed.
比较了含镶嵌晶粒铜双晶体及其基体单晶体的循环变形行为，结果表明，双晶体的循环应力总是高于基体单晶体，结合表面滑移形貌和饱和位错组态，分别讨论了镶嵌晶粒和环绕晶界对双晶体循环变形行为的影响。
3) dislocation patterns
位错组态
1.
The combined action of the applied and internal stress has brought about the formation of dislocation patterns in the process of plastic deformation.
金属塑性变形过程中 ,外加应力和内应力的共同作用导致位错组态的形成。
2.
The cyclic saturation dislocation patterns within grains and near grain boundary (GB) were investigated in a copper bicrystal with a perpendicular by SEM ECC technique.
通过对垂直晶界［５９１３］⊥［５７９］铜双晶体进行循环变形，借助于扫描电镜电子通道衬度技术研究了组元晶体及晶界附近的循环饱和位错组态，结果表明两个组元晶体的表面滑移程度不同，两个组元晶体中的循环饱和位错组态也明显不同，驻留滑移带只能在组元晶体Ｇ１中形成，驻留滑移带能够到达晶界但不能穿过晶界。
4) dislocation microstructure
位错组态
1.
The dislocation microstructures in the tensile specimen of aluminium lithium alloys 2090 with addition of minor rare earth element cerium (2090+Ce) were investigated by means of TEM (electron transmission microscopy).
本工作利用TEM技术对添加微量稀土铈的 2 0 90铝锂合金 (2 0 90 +Ce)拉伸试样中位错组态进行了观察 。
2.
Based on the tensile performance of aluminium lithium alloys 2090 and rare earth high strength aluminium lithium alloy (2090+Ce, add trace addition of cerium to the alloy 2090), the dislocation microstructures in the tensile samples of two alloys were investigated by means of TEM technique in order to understand the relationship between macro properties and micro deformation.
在 2 0 90铝锂合金和添加微量稀土铈的 2 0 90铝锂合金 (2 0 90 +Ce)的拉伸性能测试的基础上 ,利用TEM技术对拉伸试样中位错组态进行了观察 ,探讨宏观力学性能与微观变形行为间的联系。
5) dislocation structure
位错组态
1.
The evolution of slip morphology and dislocation structure was observed by using SEM-ECC technology.
5X10-3通过扫描电子显微镜-电子通道衬度技术（SEM-ECC）对滑移形貌和位错组态的演化进行了观察,发现由于晶粒内部的几何效应使沿晶界的位错组态随着晶粒的旋转方向的变化也相应发生变化,逐渐表现为由滑移带与晶界的相互作用过渡到形变带与晶界的相互作用。
6) dislocation loop group
位错环组
1.
The results show that dislocation loop groups are the typical dislocation morphologies of the creep deformation structure in the alloy.
结果表明:位错环组是合金蠕变变形结构中的典型位错组态;合金的蠕变抗力随β基体上弥散分布的第二相析出数量的增加而提高。
补充资料：电子组态
| 电子组态 electron configuration 原子内电子壳层排布的标示。又称电子构型。原子中的电子排布组成一定的壳层，例如 ，硅原子的电子组态是 1s22s22p63s23p2，表示其14个电子中2个排布在1s态，2个排布在2s态，6个排布在2p态，2个排布在3s态和最后 2 个电子排布在3p态，有时可简示为 3s23p2如果一个电子激发到4s态，则相应的电子组态为1s22s22p63s23p4s。或简示为3s23p4s。电子组态清楚地显示出核外电子的排布状况。 |
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参考词条