As a representative,Intel Corporation is studying the sub-50-nm Si nanotransistors,and when they developed THz CMOS planar transistors,they overcame a lot of difficulties such as gate leakage current ,off-state leakage,resistance enhanced and higher operation voltage.

In this thesis, Si nanocrystals were obtained by reactive sputtering and thermal activated reaction, and its photoluminescence properties, microstructure, phase structure and surface bond structure were measured and analyzed.

After scaling down to nanosized range,the usual used SiO2 for the gate dielectric of MOS transistor can not be suitable for the further scaling down of nanotransistors,the high k gate dielectric should be used.

Determination of the region where Si nanoparticles form during pulsed laser ablation;

Influence of the ambient pressure of Ar on the average size of Si nanoparticles deposited by pulsed laser ablation;

Relation between target-substrate separation and size-uniformity of Si nanoparticles prepared by laser ablation;