1) baking temperature
烘烤温度
1.
The effect of baking temperature on the crystal structure and ferroelectric properties of Bi_ (3.25)La_( 0.75)Ti_3O_(12) thin films prepared by sol-gel processing;
烘烤温度对溶胶-凝胶法制备镧掺杂钛酸铋薄膜结构与铁电性质的影响
2.
LaNiO3(LNO) thin films were prepared on Si(100) substrates with various baking temperatures from 150 ℃ to 300 ℃ by sol-gel route.
利用X射线粉末衍射、原子力显微镜、扫描电子显微镜和四探针电阻测量法研究了不同烘烤温度对LaNiO3薄膜的晶体结构、表面形貌和导电性能的影响。
3.
The experimental results show that there are four kinds of microscopic process in baking process and the effect of baking temperature is determined by the integrated influence of these four microscopic processes.
采用正电子湮没技术研究了烘烤温度对 ELC—BH 钢板烘烤硬化性的影响,指出了烘烤期间钢板中可能存在四种不同的微观变化过程。
2) baking temperature and humidity
烘烤温湿度
1.
Effect of baking temperature and humidity change on leaf membrane lipid peroxidation to the different varieties of flue-cured tobacco
烘烤温湿度变化对不同烤烟品种烟叶膜脂过氧化作用的影响
4) baking temperature uniformity
烘烤温度均质性
5) High temperature baking
高温烘烤
1.
Analysis of silver coating yellowing after high temperature baking;
镀银层高温烘烤发黄原因分析
6) baking regime
烘烤制度
1.
There are many factors that influence the continuous heats of tundish: preheating and baking regime,refractory wash,daubing process,refractory material and the casting temperature etc.
影响中间包连浇炉数的因素包括中包预热和烘烤制度、中间包的耐火涂抹材料和涂抹工艺以及中间包的功能材料和中间包的浇注温度等,通过优化预热和烘烤制度,改进中间包耐火材料质量和涂抹工艺,降低中间包的浇注温度,使平均连浇炉数由原来的14。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条