1) planar defect
面状缺陷
1.
Enhancement of an ultrasonic B scan image of planar defect;
面状缺陷超声B扫描检测图像增强研究
2.
Characteristic and recognition of ultrasonic TOFD signal and image for planar defect;
面状缺陷超声TOFD法信号和图像的特征与识别
2) spot like defects
斑状缺陷
3) needle_like defect
针状缺陷
4) haze defect
雾状缺陷
1.
The haze defect shows more serious status during the lithography process coming to 193 nm wavelength.
在光刻波长进入到193 nm之后,雾状缺陷(haze defect)越发严重,研究发现环境是雾状缺陷产生的重要原因。
5) platelet defect
片状缺陷
1.
Determination of structural characteristics and depth profile of platelet defects in hydrogen-implanted silicon wafers by HREM;
注氢硅片中片状缺陷的结构特征及其深度分布的高分辨电镜研究
6) columnar defects
柱状缺陷
1.
Irradiation with 180 MeV Cu 11+ introduced the columnar defects, which act as strong and effective pinning center with a.
拟合结果与试验结果符合得较好 ,这表明辐照产生的柱状缺陷作为主要的钉扎中心 ,具有较高的钉扎能 ,且柱状缺陷在直径上与磁通涡旋有相近的尺寸 。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条