1) pulsed bias
脉冲偏压
1.
Effect of pulsed bias on chemical structure of DLC films prepared by plasma processing;
脉冲偏压对等离子体沉积DLC膜化学结构的影响
2.
Investigation on CN_x films deposited by pulsed bias arc ion plating;
脉冲偏压电弧离子镀CN_x薄膜研究
3.
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
结果表明:增加脉冲偏压、脉冲频率、脉宽、射频功率和气压能提高Ar离子对PTFE靶的溅射能力,增加空间中氟碳自由基的数量,其中各参数对峰位位于25。
2) pulse bias voltage
脉冲偏压
1.
The effects of the flow rate of oxygen and pulse bias voltage on the structure, deposition rate and the surface morphology of thin film were studied.
研究了氧流量和脉冲偏压对薄膜相结构、沉积速率、表面形貌、薄膜硬度的影响。
2.
The influence of pulse bias voltage on the microstructure and properties of TiN films deposited by vacuum arc were studied.
研究了脉冲偏压对真空电弧沉积TiN薄膜组织与性能的影响。
3.
Al coatings on depleted uranium surface were prepared with magnetron sputtering ion plating process at different pulse bias voltages.
结果表明:在-900 V脉冲偏压下所得镀层与铀基体结合良好,镀层与基体之间存在较为明显的“伪扩散区”;与直流偏压相比较,脉冲偏压所得镀层结合强度明显增强,镀层的致密性显著改善。
3) pulse bias
脉冲偏压
1.
Influence of pulse bias on surface properties of TiN films fabricated by arc ion plating with large rectangle targets;
脉冲偏压对矩形平面大弧源离子镀TiN膜层性能的影响
2.
Orthogonal designs are used to investigate the effect of various parameters on TiN coating in arc ion plating techniques when pulse bias is imposed.
用正交设计实验研究了电弧离子镀技术中采用脉冲偏压以后各种参数对沉积TiN薄膜性能的影响。
4) bias pulse
偏压脉冲
5) pulsed biasing
脉冲偏压法
6) negative bias pulsed power
脉冲负偏压电源
1.
Several pulsed parts made up a negative bias pulsed power,whose frequency and duty cycle is regulated directly at the side of high voltage.
一种脉冲负偏压电源是由多个脉冲分量形成的电路串联构成 ,脉冲的频率和占空比直接在高压侧调节。
补充资料：GQDM系列单级脉冲干燥机
 单级脉冲气流干燥机： 适用于各类含表面水份的粉粒状、松散结晶物料干燥脱水，采用先进的脉冲强化换热结构，通过改变物料与热介质之间的相对速度，有效地强化热质交换过程。 特点： 1．干燥时间短、脱水速度快、一般在0.5-3秒。热效率高、且产品不产生过热现象。自动化程度高、干燥产品质量好。 2．干燥强度大、脱水能力可从25 kgH2O/h至2000 kgH2O/h。 3．设备简单、占地面积小、投资省，GQW型为专用低高度紧凑型。 4．应用范围广，可适用于各种粉粒状、膏糊、滤饼类物料。 5．可根据用户情况及物料耐热温度选择蒸汽、电、热风炉、烟气炉、锅炉烟气余热等作为热源。热介质的温度可以从120℃至780℃之间选择。 选型表：
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参考词条