1) bias pulse
偏置脉冲
2) pulsed biasing
脉冲偏置法
3) pulse current bias
脉冲电流偏置
4) pulsed bias
脉冲偏压
1.
Effect of pulsed bias on chemical structure of DLC films prepared by plasma processing;
脉冲偏压对等离子体沉积DLC膜化学结构的影响
2.
Investigation on CN_x films deposited by pulsed bias arc ion plating;
脉冲偏压电弧离子镀CN_x薄膜研究
3.
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
结果表明:增加脉冲偏压、脉冲频率、脉宽、射频功率和气压能提高Ar离子对PTFE靶的溅射能力,增加空间中氟碳自由基的数量,其中各参数对峰位位于25。
5) pulse bias
脉冲偏压
1.
Influence of pulse bias on surface properties of TiN films fabricated by arc ion plating with large rectangle targets;
脉冲偏压对矩形平面大弧源离子镀TiN膜层性能的影响
2.
Orthogonal designs are used to investigate the effect of various parameters on TiN coating in arc ion plating techniques when pulse bias is imposed.
用正交设计实验研究了电弧离子镀技术中采用脉冲偏压以后各种参数对沉积TiN薄膜性能的影响。
6) pulse bias voltage
脉冲偏压
1.
The effects of the flow rate of oxygen and pulse bias voltage on the structure, deposition rate and the surface morphology of thin film were studied.
研究了氧流量和脉冲偏压对薄膜相结构、沉积速率、表面形貌、薄膜硬度的影响。
2.
The influence of pulse bias voltage on the microstructure and properties of TiN films deposited by vacuum arc were studied.
研究了脉冲偏压对真空电弧沉积TiN薄膜组织与性能的影响。
3.
Al coatings on depleted uranium surface were prepared with magnetron sputtering ion plating process at different pulse bias voltages.
结果表明:在-900 V脉冲偏压下所得镀层与铀基体结合良好,镀层与基体之间存在较为明显的“伪扩散区”;与直流偏压相比较,脉冲偏压所得镀层结合强度明显增强,镀层的致密性显著改善。
补充资料：偏置屈服应力
分子式：
CAS号：
性质：应力-应变曲线偏离线性达到规定应变百分数的应力。也有称作残余变形屈服应力。该规定的变形量是人们事先商定的（偏置）。这种场合往往是由于该材料的应力、应变曲线不出现明显的屈服点，故作此规定。以统一衡量材料的力学性能，便于互相比较。当然，规定的该值不应超过该材料的拉伸强度值。
CAS号：
性质：应力-应变曲线偏离线性达到规定应变百分数的应力。也有称作残余变形屈服应力。该规定的变形量是人们事先商定的（偏置）。这种场合往往是由于该材料的应力、应变曲线不出现明显的屈服点，故作此规定。以统一衡量材料的力学性能，便于互相比较。当然，规定的该值不应超过该材料的拉伸强度值。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条