1) reaction sintering
反应烧结
1.
Microstructure and properties of Mo_2FeB_2 cermets clad layer by reaction sintering;
反应烧结三元硼化物金属陶瓷覆层的组织与性能
2.
Densification of laser ignited reaction sintering of Ni-Al-Cu powder alloy;
Ni-Al-Cu粉末合金激光点火反应烧结的致密化研究
3.
The samples prepared by general sintering and reaction sintering are investigated by XRD,SEM and other testing means for their structure and performance.
采用常规烧结法和反应烧结法烧结制品,并利用XRD和SEM等测试手段对制品的结构与性能进行了分析研究。
2) reactive sintering
反应烧结
1.
Preparation of cemented carbide having highly oriented WC grains by reactive sintering of W-Co-Nano carbon tubes;
W-Co-纳米碳管反应烧结制备高度取向硬质合金
2.
Densification behavior during reactive sintering of compacted Ti/Al composite powders prepared by high energy ball milling;
高能球磨Ti/Al复合粉体的反应烧结致密行为
3.
Temperature model of reactive sintering of Ni Al thermal spray layer;
Ni-Al喷涂层中温反应烧结的温度变化模型
3) reaction bonded
反应烧结
1.
SiC platelets/C preform was infiltrated with liquid silicon to prepare reaction bonded silicon carbide(RBSC) materials.
以液Si浸渗SiC片晶和C的坯体制备了SiC片晶增韧反应烧结SiC陶瓷材料,讨论了SiC片晶的掺加分数及烧结温度对材料显微结构和力学性能的影响,并比较了所得材料与传统反应烧结材料的力学性能。
2.
The high temperature oxidation kinetics of a reaction bonded silicon carbide oxided in air at 1 300℃ were investigated.
研究了反应烧结碳化硅陶瓷在1300℃空气中的高温氧化行为,结果表明:高温氧化过程中在试样表面出现的非晶态SiO2晶化以及氧化膜起裂,使得该陶瓷氧化曲线遵循对数氧化规律。
3.
The relation between microstructure and resistivity of reaction bonded silicon carbide (RBSiC) is examined.
研究了反应烧结碳化硅及随后经１６５０℃和１８００℃除硅处理后，材料的显微组织与电阻率之间的关系。
4) reaction-bonded
反应烧结
1.
Low density silicon nitride with about 55% porosity and globed macropores was prepared by reaction-bonded raw silicon powder and adding 30% in mass pore-forming agent of benzoic acid ball-like particles.
以硅粉为原料,添加质量分数为30%的成孔剂(苯甲酸)球形颗粒,反应烧结制备了气孔率为55%,具有球形宏观孔的低密度多孔氮化硅陶瓷。
2.
A near-net-shape SiC was prepared by reaction-bonded from a pure carbon perform which was fabricated by mould from graphite power as raw and phenolic resin as binder.
以石墨粉体为原料,酚醛树脂为粘接剂,采用模压成型工艺制备了全碳质素坯,反应烧结后得到S iC材料。
3.
The effects of carbon content, moulding pressure, and carbon particle size of green body on microstructure and properties of reaction-bonded silicon carbide (RBSC) have been investigated.
研究了反应烧结碳化硅陶瓷的显微组织和性能与生坯碳含量、成型压力以及碳粉粒度的关系。
5) reaction-sintering
反应烧结
1.
Si3N4-BN composite was prepared by using Si and BN as raw materials under nitrogen gas flow at 1 450℃by the reaction-sintering method.
以Si粉和BN粉为原料,Fe2O3为烧结助剂,采用反应烧结法于1450℃氮气气氛下制备了Si3N4-BN复合材料。
2.
The reaction-sintering process and microstructure of mullite-zirconia composites sintered and reacted in-situ were investigated.
研究了用锆英石和工业氧化铝合成锆莫来石材料的反应烧结过程和显微结构。
3.
Si3N4-BN composites were prepared by reaction-sintering method with Si and BN as raw materials under nitrogen atmosphere at 1450℃.
以Si粉和BN粉为原料,采用反应烧结法于1450℃氮气气氛下制备了Si3N4-BN复合材料。
6) sintering reaction
烧结反应
1.
The sintering reactions were completely studied when two different kinds of additives were introduced into the Sialon system.
研究了在 Ｓｉａｌｏｎ系统中分别引入１０％的 Ｓｉｎ－Ｍ’（ｍｅｌｉｌｉｔｅ）和 ＹＡＧ（ｇａｒｎｅｔ）后的烧结反应过程。
2.
Thermodynamic calculation shows that the temperature of the sintering reaction is around 800 K(527 ℃),with sodium carbonate as the additive,and the products are mainly NaAlSiO_(4),KAlSiO_(4) and Na_(2)SiO_(3).
通过烧结反应实验,得到优化反应温度为800~850℃,霞石正长岩的分解率达95%以上。
补充资料：反应烧结
分子式：
CAS号：
性质：又称活化烧结或强化烧结。通过添加物的作用，使反应与烧结同时进行的一种烧结方法。此法与普通烧结法比较，有如下两个主要特点：(1)提高制品质量，烧成的制品不收缩，尺寸不变化；(2)反应速度快，传质和传热过程贯彻在烧结全过程。普通烧结法物质迁移过程发生在坯体颗粒与颗粒的局部，反应烧结法物质迁移过程发生在长距离范围内。分为液相反应烧结和气相反应烧结两类。采用前一类的居多。例如，烧结氧氮化硅坯件时添加硅、二氧化硅和氟化钙(或氧化钙、氧化镁等，玻璃相形成剂)同氮反应生成二氮氧化二硅(Si2ON2)，氧化钙、氧化镁等同二氧化硅形成玻璃相，氮溶解在焙融体(玻璃相)中；Si2ON2，晶体从被氮饱和的玻璃相中析出。这样制出的氧氮化硅的密度可相当于理论密度90%以上。
CAS号：
性质：又称活化烧结或强化烧结。通过添加物的作用，使反应与烧结同时进行的一种烧结方法。此法与普通烧结法比较，有如下两个主要特点：(1)提高制品质量，烧成的制品不收缩，尺寸不变化；(2)反应速度快，传质和传热过程贯彻在烧结全过程。普通烧结法物质迁移过程发生在坯体颗粒与颗粒的局部，反应烧结法物质迁移过程发生在长距离范围内。分为液相反应烧结和气相反应烧结两类。采用前一类的居多。例如，烧结氧氮化硅坯件时添加硅、二氧化硅和氟化钙(或氧化钙、氧化镁等，玻璃相形成剂)同氮反应生成二氮氧化二硅(Si2ON2)，氧化钙、氧化镁等同二氧化硅形成玻璃相，氮溶解在焙融体(玻璃相)中；Si2ON2，晶体从被氮饱和的玻璃相中析出。这样制出的氧氮化硅的密度可相当于理论密度90%以上。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条