1) Energy gap
能隙
1.
A DFT study on structure,energy gap and spectrum property of the conjugated polymer poly(2,5-furylene vinylene);
2,5-呋喃乙烯撑齐聚物(n=1～x)的结构能隙与光谱性质的理论研究
2.
The determining method for energy gap and energy-band parameters of conducting polymers;
导电聚合物发光材料能隙和能带参数的确定方法
3.
Study on specific heat and two energy gaps of MgB_2 samplesprepared by ambient pressure and high pressure;
常压和高压合成MgB_2的低温比热及两个超导能隙研究
2) Band gap
能隙
1.
PAS is a semiconductor material with quite small band gap and good pristine electric conductivity.
从聚并苯的能带结构可以得出：聚并苯是有较小能隙、良好本征导电性能的半导体材料，考虑链间作用，对能带结构特征未有大的改变，能隙等值略有修正，导电能力有所加强。
2.
7, which showed different band gap values.
7能带结构的研究仅限于实验上,而且不同实验测量的能隙值不同。
3.
The results indicate that, with compressibility increasing , the width of band gap becomes wider,and that the interaction between Fe d electrons and S p electrons is stronger,and length of Fe-S bond becomes shorter.
计算结果表明 :随着压缩度的增加 ,外压调制下的Fe—S键长缩短 ,FeS2 小的能隙变宽 ,Fe的d电子与S的 p电子杂化增强 ,原子间相互作用增大。
3) Bandgap
['bændɡæp]
能隙
1.
A Precise CMOS Bandgap Voltage Reference;
一种高精度CMOS能隙基准电压源
2.
A new low-voltage bandgap voltage reference was presented.
介绍了一种新型能隙基准电压源电路,此电路在smic0。
3.
Based upon analysis of several type s of bandgap voltage reference circuit, we demonstrate a high precision circuit of bandgap voltage reference with relatively simple structure for high-speed se rial link.
在分析了几种基准电压源的基础上 ,设计并实现了一种高精度用于高速串行通信接口的 CMOS能隙基准电压电路。
4) energy gap
能隙<能>
5) energy band gap
能量带隙
1.
The effects of content of Nb2O5 on refractive index,stability,optical band gap and energy band gap of the glasses are discussed.
利用样品的吸收光谱计算了其直接允许跃迁、间接允许跃迁及能量带隙。
6) superconducting energy gap
超导能隙
1.
The results show that the superconducting energy gap (2?(T)) is about 80 meV at Tc (93 K), and decreases smoothly as the temperature increasing.
计算结果表明,其超导能隙值2?(T)在101meV量级;并在超导临界温度点(Tc=93K)附近,有超导能隙不为零的极小值;当温度超过Tc时,YBa2Cu3O7有赝能隙存在,且赝能隙随温度升高至T*=120K时,达到极大值;当温度超过T*时,赝能隙又有明显减小趋势。
2.
The conclusion was that superconducting energy gap could not be obtained by measuring the emergence work of the metal.
指出 :不能通过测量金属的脱出功来测量超导能
补充资料：BCS能隙方程（BCSenergygapequation）
BCS能隙方程（BCSenergygapequation）
在通常情况下，BCS理论定义对势
Δ=-V〈ψ(r,↓)ψ(r,↑)〉
有能隙存在时它代表超导能隙，ψ为场算符，在弱耦合条件下（`N(0)V\lt\lt1`）给出的能隙方程为
$1=N(0)Vint_0^{\hbar\omega}(\epsilon^2 \Delta^2(T))^{-1/2}$
$*th[(\epsilon^2 \Delta^2(T))^{1/2}//2k_BT]d\epsilon$
式中N(0)为T=0K时费米面上一种自旋方向的态密度，V为电子间净吸引势的平均强度，$\hbar$和ωD分别是除以2π的普朗克常数和德拜频率，ε是以费米面为零点的电子能量，kB为玻尔兹曼常数。数值计算的Δ(T)与T的关系见下图，它与多数超导金属的实验结果符合甚好。
在T→Tc和T→0K时的近似结果为：
$\Delta(T)=\Delta(0)-(2\pi\Delta(0)k_BT)^{1/2}*e^{-\Delta(0)//k_BT}$
$(T\lt\ltT_c)$
$\Delta(T)=(1.74)\Delta(0)(1-T//T_c)^{1/2}$
$(T_c-T)\lt\ltT_c$
这里
$\Delta(0)=2\hbar\omega_Dexp(-1//N(0)V)$
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条