2) trap level
陷阱能级
1.
The results indicate that Eu2+ ions act luminescent centers and Dy3+ ions as trap levels.
研究结果表明,掺杂的Eu在基质材料中主要充当发光中心,而Dy离子主要充当陷阱能级。
3) Trap energy
陷阱能级
1.
By analysis of dark current mechanism and experiments,it is found that the n-InSb reverse layer induced by trap energy of anode polarization layer connects with p-InSb layer,which plays a role of shunt resistance,and leads to the electric performance of detectors badly.
通过对其漏电流分析和制作MIS器件进行试验,发现阳极化层中的陷阱能级感应n型InSb表面产生反型,p/n结表面附近的反型层与p型层连接后起到分流电阻作用,导致器件电性能变差。
4) trap distribution
陷阱分布
1.
Study of the influence of sintering temperature on the trap distribution of alumina ceramics;
烧结温度对氧化铝陶瓷介质陷阱分布的影响
5) deep level trap
深能级陷阱
1.
Both positive and negative frequency dispersions of transconductance are simualted and analyzed with deep level traps located at the channel/buffer interface.
对沟道缓冲层界面深能级陷阱的分析表明,4H-SiC MESFET的跨导既有正向偏移,也有负向偏移。
6) trap depth distribution
陷阱深度及分布
补充资料：流动性偏好陷阱或凯恩斯陷阱（Keynes trap）
流动性偏好陷阱或凯恩斯陷阱（Keynes trap）：当利率极低，人们会认为这种利率不大可能再降，或者说有价证券市场价格不大可能上升而只会跌落时，人们不管有多少货币都愿意持在手中，这种情况被称为%26#8220;凯恩斯陷阱%26#8221;或%26#8220;流动偏好陷阱%26#8221;。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条