1) jet flow frequency
射流频率
1.
Numerical prediction for extreme jet flow frequency of rotary gas wave refrigerator
旋转式气波制冷机极值射流频率的数值预测
2) RF frequency
射频频率
1.
SiNx thin films were deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) methodunder different RF frequency, and the influence of RF frequency on both the deposition process andproperties of the SiNx film were studied.
用ＰＥＣＶＤ方法制备氮化硅薄膜，研究了射频频率对氮化硅薄膜的沉积和性质的影响。
3) the frequency of RF magnetic field
射频场频率
4) RF-power
射频功率
1.
Fluorinated amorphous hydrogenated carbon(a-C∶F∶H) thin films were deposited by RF plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF_4 and CH_4 as source gases at different RF-power and deposition temperatures and annealed in N_2 atmosphere.
本文使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C∶F∶H)薄膜,并在N2气氛中进行了不同温度的退火处理。
2.
The influence of different RF-power on the crystal structures,surface morphologies and optical properties of ZnO thin films fabricatied on ITO(In_2O_3:Sn)substrates was investigated.
结果表明,随着射频功率的提高,沿(002)方向生长的ZnO薄膜的结晶度显著增强,薄膜的表面颗粒略有减小,表面粗糙度由13。
3.
Amorphous fluorinated carbon films were deposited by PECVD using CH 4 and CF 4 as source gases at different RF-power.
以CH4和CF4的混合气体作源气体,利用等离子体增强型化学气相沉积法(PECVD),改变射频功率,制备了一批氟化非晶碳薄膜样品。
5) radio frequency power
射频功率
1.
Results show that the radio frequency power and the pressure in the reaction chamber are two main factors that affect the depositing rate distribution of PECVD and both are constrained by the linear relationship p = kW.
结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳。
6) ejaculatory frequency
射精频率
补充资料：频率计量(见时间频率计量)
频率计量(见时间频率计量)
frequency metrology: see time and frequency metrology
口n IQ liliang顷率频率计皿(f比quency metrolo盯) 计t。见时闰
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条