1) vertically aligned
直立生长
1.
The homogeneous bimetallic catalysts(Fe/Co) particles on a silicon wafer was prepared by spin coating with the mixture of ethanol solution of polyethylene glycol(PEG) and salts of Fe/Co for the synthesis of vertically aligned single-walled carbon nanotubes.
采用聚乙二醇和铁盐、钴盐的乙醇溶液,通过旋涂法在硅基底表面分散得到制备单壁碳纳米管的催化剂颗粒,并用水汽辅助化学气相沉积法制备了直立生长的单壁碳纳米管。
2) Long-term upright posture
长期直立
1.
Conclusion:Long-term upright posture induces rat lumbar vertebral hyperosteogenesis which is related to the upregulation of TGF-β1 and may be relevant to fibrochondrocyte mataplasia from annulus fibrosus in outer layer.
目的:通过诱导大鼠从爬行体位到直立体位,观察长期直立与腰椎骨质增生的关系并探讨其可能机制。
3) Rome lettuce
直立生菜
1.
Effects of the vegetative stages on the growth, yield and quality of Rome lettuce;
营养生长期长短对直立生菜生长、产量和品质的影响
4) Diameter growth
直径生长
1.
As the solution of the definite problem,an analytical expression is obtained,which describes the changing structure in terms of diameter growth and mortality of the individual trees.
通过求解这个定解问题，得到了用单木的直径生长和枯损来描述林分结构动态变化的解析表达式。
5) direct growth
直接生长
1.
Monocrystalline GaAs layer grown on (100),(111) and (211) Si substrate by hot wall epitaxy two-step growth and direct growth is reported.
报道了采用热壁外延 (HWE)技术 ,在 (10 0 ) ,(111)和 (2 11)三种典型Si表面通过两步生长和直接生长法制备GaAs单晶薄膜 ,经过拉曼光谱、霍尔测试和荧光光谱分析比较 ,得出结论 :(1)相同取向Si衬底 ,两步生长法制备的GaAs薄膜结晶质量比直接生长法制备的GaAs薄膜的要好 ;(2 )采用HWE技术在Si上异质外延GaAs薄膜 ,其表面缓冲层的生长是降低位错、提高外延质量的基础 ;(3)不同取向Si衬底对GaAs外延层结晶质量有影响 ,(2 11)面外延的GaAs薄膜质量最好 ,(10 0 )面次之 ,(111)面最
6) vertically slender equipment
直立细长设备
1.
It explained the cause of vertically slender equipment vibration induced by wind and determined the calculation method of critical wind speed during wind inducing vibration of the equipment.
阐述了直立细长设备发生风共振的起因。
补充资料：直立
1.立身正直。 2.挺直站立。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条