1) ionization of dopant
杂质电离
1.
In SiC,the relations between the influence of valley-orbit splitting on ionization of dopant and doping concentration,temperature and the depth of dopant energy level were investigated systematically through theoretical computation.
对SiC中基态施主能级分裂对杂质电离的影响,与温度、掺杂浓度和杂质能级深度的关系进行了系统研究。
2) saturation ionization of impurities
杂质饱和电离
1.
The origin of saturation ionization of impurities, semiconducting properties of Gray Tin and Gunn effect is analyzed.
通过对半导体杂质饱和电离、灰锡（α－Ｓｎ）半导体特性以及Ｇｕｎｎ效应等的解释，指出能态密度在研究半导体物理现象中的重要应用。
3) ionized impurity scattering
电离杂质散射
4) impurity ions
杂质离子
1.
Effect of impurity ions on microstructure of copper deposition;
杂质离子对铜沉积微观结构的影响
2.
Effects of impurity ions on the performance of Ni/MH battery;
杂质离子对MH/Ni电池性能的影响
3.
Study on the impact of impurity ions on SPE membrane-electrode assembly
杂质离子对SPE膜-电极组件性能影响研究
5) impure ions
杂质离子
1.
Influence of impure ions on performance of solid polymer electrolyte water electrolyser;
杂质离子对固体聚合物电解质水电解槽性能的影响
2.
The influence of impure ions to the quality of cathodic electrophoresis coatings, prevention and cure thereof are analyzed.
分析了杂质离子对阴极电泳涂装的影响及其防治措施。
6) impurity ion
杂质离子
1.
It was introduced that the sample pretreatment methods were used when the micro impurity ions in the inorganic compounds, organic compounds and polymer materials etc.
介绍离子色谱法测定无机化合物、有机化合物、高分子材料等样品中微量杂质离子所采用的样品前处理方法,包括化学反应基体消除法、萃取法、化学提取法、膜处理法以及分解处理法
2.
The effects of individual procedure (including Zn plating,bright dipping,passivating,rinsing and drying) and impurity ions (such as Zn2+ and Fe3+) on the performance of passivation coating were discussed.
讨论了各工序(包括镀锌、出光、钝化、水洗和干燥)及杂质离子(包括Zn2+和Fe3+)对钝化膜性能的影响,介绍了工艺控制及杂质离子的消除。
补充资料：杂质
1.一种物质中夹杂的其它物质。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条