1) RF negative bias
射频负偏压
1.
Effect of RF negative bias on structure and performance of DLC films prepared by ECR-RF-PECVD
射频负偏压对沉积类金刚石薄膜结构和性能的影响
2) Radio Frequency Negative Self-bias Voltage
射频自负偏压
3) RF bias voltage
射频偏压
1.
In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.
对于上下电极双射频源的电感耦合(ICP)等离子体刻蚀设备的关键工艺参数——下电极射频偏压的变化特性进行了实验与物理定性分析。
4) RF self-bias
射频自偏压
1.
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。
5) negative bias
负偏压
1.
Aligned carbon nanotubes were prepared by negative bias-enhanced hot filament chemical vapor deposition system under glow discharge.
利用负偏压增强热丝化学气相沉积系统,在辉光放电的情况下制备出准直碳纳米管,并用扫描电子显微镜研究了不同负偏压对准直碳纳米管生长的影响。
2.
In order to analyze the effect of the negative bias on the adhesions strength between multilayer and substrate,and the hardness of the multilayer have been tested and the morphology has also been observed.
用电弧离子镀方法在高速钢、不锈钢与铜基体上沉积合成TiN/TiCN多层薄膜 ,在其他参数不变的情况下只改变负偏压 ,着重考察不同负偏压下薄膜的沉积温度、膜基结合强度、显微硬度以及表面形貌等 ,研究基体负偏压在沉积多层薄膜中所起的作用。
3.
Carbon nanotubes were synthesized on silicon substrates coated with NiFe films of different thickness by negative bias-enhanced hot filament chemical vapor deposition at different negative bias and pressure, and their growth was investigated by scanning electron microscopy.
利用负偏压增强热丝化学气相沉积在不同的负偏压和压强下 ,在沉积有不同厚度NiFe膜的Si衬底上制备了碳纳米管 ,并用扫描电子显微镜研究了它们的生长。
6) negative bias voltage
负偏压
1.
Negative Bias Voltage Design Based on the CUK Controller;
基于CUK型控制器的负偏压设计
2.
A series of experiments were conducted to study the effects of negative bias voltage on substrate temperature,surface properties of the film,adhesive strength with the substrate,and tribological properties of the film during the preparation of TiN film using low-temperature magnetic sputtering technology.
研究了在低温磁控溅射沉积TiN薄膜过程中,负偏压对基体温度、薄膜表面性能、薄膜与基体界面结合强度以及摩擦学性能的影响。
3.
Based on the driving circuit of IR2110, the circuits for producing negative bias voltage and increasing driving power are introduced.
在IR2110驱动电路的基础上,介绍了产生负偏压和提高驱动功率的电路,并且针对电路中存在占空比的问题,设计了占空比调节电路。
补充资料：射频
射频
物理学术语。介于声波和红外线之间的波的频率。用于MR研究的射频常在兆赫兹(MHz)范围内。磁共振成像中，必须使用射频脉冲选择性激励特定层面的质子，以产生MR信号。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条