1) substrate negative voltage
基体负偏压
1.
Using MF unbalanced magnetron sputtering technology,Ti/TiN/Ti(C,N) hard films are deposited on different substrates like 316L stainless steel,high-speed steel and cemented carbide by changing working ambience,substrate negative voltage,and so on.
通过改变工作气氛、基体负偏压等工艺参数,对制备薄膜的硬度进行检测分析,结果表明:在Ti(C,N)薄膜的制备中,工作气氛和基体负偏压是影响薄膜硬度的主要因素。
2) Substrate negative bias
基片负偏压
3) substrate bias voltage
基体偏压
1.
Influence of substrate bias voltage on friction and wear properties of CrTiAlN coatings;
基体偏压对CrTiAlN镀层摩擦磨损性能的影响
4) negative bias
负偏压
1.
Aligned carbon nanotubes were prepared by negative bias-enhanced hot filament chemical vapor deposition system under glow discharge.
利用负偏压增强热丝化学气相沉积系统,在辉光放电的情况下制备出准直碳纳米管,并用扫描电子显微镜研究了不同负偏压对准直碳纳米管生长的影响。
2.
In order to analyze the effect of the negative bias on the adhesions strength between multilayer and substrate,and the hardness of the multilayer have been tested and the morphology has also been observed.
用电弧离子镀方法在高速钢、不锈钢与铜基体上沉积合成TiN/TiCN多层薄膜 ,在其他参数不变的情况下只改变负偏压 ,着重考察不同负偏压下薄膜的沉积温度、膜基结合强度、显微硬度以及表面形貌等 ,研究基体负偏压在沉积多层薄膜中所起的作用。
3.
Carbon nanotubes were synthesized on silicon substrates coated with NiFe films of different thickness by negative bias-enhanced hot filament chemical vapor deposition at different negative bias and pressure, and their growth was investigated by scanning electron microscopy.
利用负偏压增强热丝化学气相沉积在不同的负偏压和压强下 ,在沉积有不同厚度NiFe膜的Si衬底上制备了碳纳米管 ,并用扫描电子显微镜研究了它们的生长。
5) negative bias voltage
负偏压
1.
Negative Bias Voltage Design Based on the CUK Controller;
基于CUK型控制器的负偏压设计
2.
A series of experiments were conducted to study the effects of negative bias voltage on substrate temperature,surface properties of the film,adhesive strength with the substrate,and tribological properties of the film during the preparation of TiN film using low-temperature magnetic sputtering technology.
研究了在低温磁控溅射沉积TiN薄膜过程中,负偏压对基体温度、薄膜表面性能、薄膜与基体界面结合强度以及摩擦学性能的影响。
3.
Based on the driving circuit of IR2110, the circuits for producing negative bias voltage and increasing driving power are introduced.
在IR2110驱动电路的基础上,介绍了产生负偏压和提高驱动功率的电路,并且针对电路中存在占空比的问题,设计了占空比调节电路。
6) Negative self-bias voltage
自负偏压
补充资料：负负
1.犹言惭愧﹑惭愧;对不起﹑对不起。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条