1) heavily B-doped Si substrate
重掺硼硅衬底
2) heavily boron-doped Czochralski silicon
重掺硼直拉硅
3) (B,Si)dopant
硼硅掺杂
4) boron-doped p+-silicon free-handing diaphragm
浓硼重掺杂硅薄膜
1.
The problem of etching holes was researched during the fabrication of boron-doped p+-silicon free-handing diaphragm using anisotropic wet etching techniques.
研究了自终止腐蚀停法制备浓硼重掺杂硅薄膜的腐蚀孔问题。
5) high boron-doped
重掺硼
1.
In this paper, high boron-doped thin silicon film is extended above single silicon wafer and sintering in high temperature to compare with Al BSF sintering.
本文对直拉单晶硅材料生长外延重掺硼的晶硅薄膜,并在高温下烧结与以往的铝吸杂比较,通过改变背场烧结的工艺条件来改善电池性能。
6) Si substrate
硅衬底
1.
The humidity sensor is fabricated with nanometer BaTiO3 film on Si substrate.
用硬脂酸盐法合成纳米钛酸钡材料,丝网印刷法将纳米钛酸钡涂在硅衬底上制成电阻式湿敏元件。
补充资料：直拉(CZ)生长中的硅单晶
直拉(CZ)生长中的硅单晶
卿 直件以一Z)月几、山，卜月，’.户·‘手
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条