1) the Fano and the Kondo resonance
Fano和Kondo共振
1.
With the Fano factor,We analyse the effect of the Fano and the Kondo resonance on the conductance and the variation of the conductance with the spin-polarization strength and the magnetic flux in both the parallel and the antiparallel lead-polarization alignments.
在左右铁磁电极平行和反平行两种磁组态下,结合Fano因子分析和讨论了Fano和Kondo共振对该系统电导的影响,以及电导随自旋极化强度和磁通的变化。
2) Kondo resonance
Kondo共振
1.
In contrast to the enhancement of the resistivity of the Kondo effect in a bulk metal, the Kondo resonance near the Fermi level localized at the quantum dot provides a new channel for the mesoscopic current and leads to an increase of the conductance in a quantum dot.
与稀磁合金中Kondo效应导致低温电阻增加不同的是,在量子点系统中,由于在费米能级处的Kondo共振为电流提供了一个新的通道,因而介观Kondo效应导致了系统电导的增加。
2.
It is showed that the Kondo resonance peak of this system at the Fermi energy position is relevant to the value of the spin-polarized strength and the magnetic flux.
结果表明,该系统在费米能级处的Kondo共振峰与自旋极化强度和磁通量的取值有关。
3) Fano resonance
Fano共振
1.
The dynamic Fano resonance, the optical signals enhanced by the dynamic localization, etc.
在Floquet态激子能谱结构的基础上 ,着重介绍了THz驱动、直流偏置下半导体超晶格中光学超快过程 (包括线性吸收和非线性波混频等 )的一些动力学效应 ,如激子Wannier Stark阶梯的劈裂与摆动、动力学Fano共振、局域化与去局域化等 。
2.
Using Floquet theory,we investigate dynamical localization effect on transport properties of an ac driving coupled quantum dot array,find photon-assistant Fano resonance in serially coupled triple quantum dots,and reveal competition between dynamical localization and Fano resonance in symmetric A-type coupled triple quantum dots.
采用理论推导和数值计算相结合的方法,我们分析了耦合量子点链系统中动态局域化效应对输运性质的影响,发现了串联耦合三量子点系统中的光子辅助Fano共振,揭示了对称的∧型耦合三量子点系统中的动态局域化效应及其对Fano共振的调控。
4) Fano resonant peaks
Fano共振峰
1.
Due to the asymmetrical levels of the two quantum dots,Fano resonant peaks occur.
当自旋翻转散射增大时,Fano共振峰开始分裂,Aharonov-Bohm振荡受到了抑制;由于点间耦合,系统形成了一个强一个弱的耦合态。
6) Fano resonance effect
Fano共振效应
1.
The transmission coefficient of the electron can be modulated up to 100% by the stub,and it is very interesting to find that the Fano resonance effect will be happen at some value of the incidence electron Fermi e.
当系统结构确定不变时,研究了入射电子费米能量与电子透射几率的关系,结果发现当入射电子能量为某一值时,出现Fano共振效应;而且发现当入射电子能量以及环长度给定的情况下,适当调整stub长度和磁通量的大小也会导致Fano共振效应的出现。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条