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1)  MgxZn1-xO∶Al thin film
MgxZn1-xO∶Al薄膜
2)  MgxZn1-xO thin films
MgxZn1-xO薄膜
1.
The influence of Mg2+ dopants on the microstructure and optical property of MgxZn1-xO thin films were investigated in detail.
30时,MgxZn1-xO薄膜为纤锌矿结构,随着x值的增加,晶格常数c逐渐减小,a逐渐增大,但晶胞体积V几乎不变;当0。
2.
This paper wants to introduce the fabrication techniques, structural and optoelectronic properties and potential application of wide-band-gap semiconductor MgxZn1-xO thin films.
本文旨在介绍宽禁带半导体MgxZn1-xO薄膜的基本性质,制备方法及应用前景。
3)  MgxZn1-xO thin films
MgxZn1-xO晶体薄膜
1.
MgxZn1-xO thin films were grown on SiO2/Si(100) using reactive electron beam evaporation technology at low temperature.
采用低温物理沉积技术在二氧化硅衬底(SiO2/Si(100)生长出了MgxZn1-xO晶体薄膜。
4)  p-type MgxZn1-xO film
p型MgxZn1-xO薄膜
1.
p-type MgxZn1-xO film was grown on semi-insulating GaAs substrate by metal-organic chemical vapor deposition.
稳定的p型MgxZn1-xO薄膜的获得为制备MgxZn1-xO同质结和发光二极管奠定了基础。
5)  hexagonal Mg_xZn_(1-x)O films
六角MgxZn1-xO薄膜
6)  Mg xZn 1-xO nanofilms
MgxZn1-xO纳米薄膜
补充资料:[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式:C16H16ClN3O3S
分子量:365.5
CAS号:26807-65-8

性质:暂无

制备方法:暂无

用途:用于轻、中度原发性高血压。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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