1) post-deposition anneal
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淀积后退火
1.
HfAlO high-k dielectrics are deposited on Si(100)by atomic layer deposition and the effects of N2 and NH3 post-deposition anneal are investigated.
实验表明,用N2和NH3对样品进行淀积后退火,可以减小等效电容厚度(CET)、降低固定正电荷密度以及减小滞回电压,从而有效地提高了介质薄膜的电学特性。
2) post-welding annealing
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焊后退火
1.
Studies on the effect of post-welding annealing on the microstructure and properties of Ti-Code 12 alloy showed that the eutectoid decomposition of residual β-phase will take place during post-welding annealing.
8Ni)焊后退火对组织和性能的影响。
5) primer falling back
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底火后退
1.
Fault tree analysis was used to analyze the reasons of the primer falling back and dropping during an interior trajectory test.
运用故障树分析法,分析某产品在内弹道试验过程中出现底火后退和脱落现象的原因,对可能造成此故障的因素进行研究和说明,并对不可排除的三个主要因素进行试验验证。
6) after-annealing
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后退火<脱模后退火>
补充资料:软化退火(见低温退火)
软化退火(见低温退火)
soft-annealing
rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条