1) post-deposition anneal
淀积后退火
1.
HfAlO high-k dielectrics are deposited on Si(100)by atomic layer deposition and the effects of N2 and NH3 post-deposition anneal are investigated.
实验表明,用N2和NH3对样品进行淀积后退火,可以减小等效电容厚度(CET)、降低固定正电荷密度以及减小滞回电压,从而有效地提高了介质薄膜的电学特性。
2) post-welding annealing
焊后退火
1.
Studies on the effect of post-welding annealing on the microstructure and properties of Ti-Code 12 alloy showed that the eutectoid decomposition of residual β-phase will take place during post-welding annealing.
８Ｎｉ）焊后退火对组织和性能的影响。
5) primer falling back
底火后退
1.
Fault tree analysis was used to analyze the reasons of the primer falling back and dropping during an interior trajectory test.
运用故障树分析法,分析某产品在内弹道试验过程中出现底火后退和脱落现象的原因,对可能造成此故障的因素进行研究和说明,并对不可排除的三个主要因素进行试验验证。
6) after-annealing
后退火<脱模后退火>
补充资料：软化退火(见低温退火)
软化退火(见低温退火)
soft-annealing
rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条