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1)  high power narrow pulse semiconductor laser
大功率窄脉冲半导体激光器
1.
According to the special test request of the laser guidance system for the high power narrow pulse semiconductor lasers,a test setup for testing peak optical power output,threshold current,forward voltage,rise time,peak wavelength and spectrum width of the high power narrow pulse semiconductor lasers was developed.
大功率窄脉冲半导体激光器主要光电性能参数为:输出峰值光功率、阈值电流、正向电压、上升时间、峰值波长、光谱半宽、半强度角。
2)  high power diode laser
大功率半导体激光器
1.
Research and Design on the Control System for High Power Diode Laser;
大功率半导体激光器控制系统的研制
2.
Laser transformation hardening was carried out on U74 rail steel by a self-developed high power diode laser.
使用自制的大功率半导体激光器对U74轨钢进行了相变硬化。
3.
Based on the characteristics of beam propagation of laser diode array(LDA),high power diode laser was coupled to a wedge-shaped fiber array.
首先从半导体激光器列阵的发光特性出发,利用楔形光纤排对大功率半导体激光器列阵光束进行耦合,最后得到一只含有19个纤芯,每个纤芯为200μm,数值孔径为0。
3)  High power semiconductor laser
大功率半导体激光器
1.
The incident power ratio of front and back cavity facet coatings was deduced,and the importance in optimized designing of electric field intensity(EFI) distribution of back cavity facet coatings for 808nm high power semiconductor laser was explained.
从实际问题出发在以往腔面膜的研制基础上,选择适合制备808 nm大功率半导体激光器腔面的镀膜材料。
2.
In order to solve the heat radiation of high power semiconductor lasers,the internal thermal distribution of the lasers and the influence of the laser diodes sintered by different solders(In,SnPb,AuSn)on the thermal resistance of the lasers were analyzed by ANSYS finite element software and the steady thermal simulation method.
为了解决大功率半导体激光器的散热问题,利用有限元软件ANSYS,采用稳态热模拟方法,分析了半导体激光器内部的温度分布情况,对比分析了In、SnPb、AuSn几种不同焊料烧结激光器管芯对激光器热阻的影响。
3.
The high efficiency and high power semiconductor laser with multi-active regions, which are cascaded by reverse biased tunnel junction(s) can resolve the problems in theory and ov.
大功率半导体激光器在光通讯、医疗、军事、印刷和光泵浦等领域有着广泛的应用,然而当通过增加注入电流提高传统半导体激光器的光束出功率时,要受到电热烧毁和光腔面灾变性损坏(COD)的限制。
4)  High power semiconductor lasers
大功率半导体激光器
1.
The recent progress of high power semiconductor lasers are reviewed with focusing on reliability,power conversion efficiency,wavelength stabilization and extended wavelength range.
大功率半导体激光器在军事领域和工业领域有着广泛的应用。
5)  high-power semiconductor laser
大功率半导体激光器
1.
This paper gives a theoretical hypothesis witch explains the laser ablation of fiber end face by high-power semiconductor laser,and basic on the hypothesis we gained that coupling efficiency of the system is changing with time,such as ηt=η0t-aβmSk=η0t-aβρ.
本文提出大功率半导体激光器(LD)对光纤耦合界面的烧蚀的理论假设,得出系统耦合效率随时间的变化关系为ηt=η0t-αβmsk=η0t-αβρ。
2.
Based on the law of refraction in vector form,the laser beam propagation in an aspheric and asymmetrical laser beam collimation system from high-power semiconductor laser has been researched for spatial laser beam long-distance propagation.
为实现空间激光束的远距离传输,利用矢量折射定理研究了大功率半导体激光器发散光束经非球面、非轴对称准直系统的光传输特性。
6)  high-power 808nm semiconductor laser
大功率808nm半导体激光器
补充资料:大功
1.大功业﹐大功劳。 2.奖励用语。 3.丧服五服之一﹐服期九月。其服用熟麻布做成﹐较齐衰稍细﹐较小功为粗﹐故称大功。旧时堂兄弟﹑未婚的堂姊妹﹑已婚的姑﹑姊妹﹑侄女及众孙﹑众子妇﹑侄妇等之丧﹐都服大功。已婚女为伯父﹑叔父﹑兄弟﹑侄﹑未婚姑﹑姊妹﹑侄女等服丧﹐也服大功。参阅《仪礼.丧服》﹑《清通典.礼服制》。
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