1) pulse semiconductor laser
脉冲式半导体激光器
1.
Based on the required precision and actual detection background,single-lens and cylinder lens design methods are proposed to collimate the beam of pulse semiconductor lasers and their design parameters are presented.
根据具体的探测环境和探测精度 ,通过理论分析 ,提出了脉冲式半导体激光器准直光束的单透镜设计方法和柱面透镜的设计方法 ,并且给出了具体的设计参数。
2) pulsed diode laser
脉冲半导体激光器
1.
Performance of direct-modulating pulsed diode laser is dependent on large-current and narrow-width pulsed driver circuit.
直接调制的大电流窄脉宽驱动电源是脉冲半导体激光器获得高峰值功率输出的重要保证。
3) semiconductor pulse laser
半导体脉冲激光器
4) high power narrow pulse semiconductor laser
大功率窄脉冲半导体激光器
1.
According to the special test request of the laser guidance system for the high power narrow pulse semiconductor lasers,a test setup for testing peak optical power output,threshold current,forward voltage,rise time,peak wavelength and spectrum width of the high power narrow pulse semiconductor lasers was developed.
大功率窄脉冲半导体激光器主要光电性能参数为:输出峰值光功率、阈值电流、正向电压、上升时间、峰值波长、光谱半宽、半强度角。
5) pulsed guidance laser radar
脉冲制导激光器
6) multi segmented semiconductor laser
段式半导体激光器
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条