1) β-FeSi_2 thin films
β-FeSi_2薄膜
1.
This paper presents our recent research results of fabrication and characterization ofβ-FeSi_2 thin films on Si (100)substrates by DC-magnetron sputtering Fe-Si mixed targets at room temperature,following post-processing.
报道了在单晶Si(100)衬底上,采用室温直流磁控溅射Fe-Si组合靶的方法,并经过后续气氛退火来制备β-FeSi_2薄膜的结果。
4) β-FeSi_2 single crystals
β-FeSi_2单晶
1.
Crystal growth technology and crystal structure of high quality β-FeSi_2 single crystals grown from vapor by employing chemical vapor transport technique and its phase transition under high pressure were studied.
本论文对闭管化学气相生长高质量β-FeSi_2单晶的工艺条件、β-FeSi_2单晶的晶体结构及其高压相演化进行了深入研究。
5) β-BBO thin films
β-BBO薄膜
1.
Fabrication of β-BBO thin films by liquid phase epitaxy technique;
液相外延法制备β-BBO薄膜
2.
Crystallineβ-BBO thin films were successfully prepared on(001)-oriented Sr~(2+)-dopedα-BBO substrates by using liquid phase epitaxy,pulsed laser deposition and vapor transport equilibration techniques.
采用液相外延法、脉冲激光沉积法以及气相传输平衡法在Sr~(2+)∶α-BBO(001)衬底上生长了质量优异的β-BBO薄膜,对薄膜进行了X射线衍射测试以及双晶摇摆曲线分析,结果表明,采用Sr~(2+)∶α-BBO单晶作为衬底制备的β-BBO薄膜具有高的择优取向度和低的半峰宽值。
6) C 3N 4 film
β-C_3N_4薄膜
补充资料:半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以,v:‘,_‘ 一J一“。,瓜米早伙鼓幕由乌教着给话_
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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