1) substrate potential
衬底电位
1.
The pre-start circuit and substrate potential choice circuit were adopted.
电路采用了预启动和衬底电位选择结构,并利用三相时钟信号方式控制电荷泵的工作状态。
2) Substrate Voltage Select
衬底电位选择
1.
The Design of A Substrate Voltage Select Circuit with High Slew Rate;
一种高转换速率衬底电位选择电路的设计
3) substrate position
衬底位置
4) substrate resistance
衬底电阻
1.
An accurate method to extract substrate resistances of RF MOSFETs is proposed.
通过对CMOS的PSP模型中四衬底电阻网络的等效电路进行Y参数分析,得到衬底电阻参数的完整提取方法。
5) substrate current
衬底电流
1.
Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors;
高压双扩散漏端MOS晶体管双峰衬底电流的形成机理及其影响
2.
Modification of MOSFET s Substrate Current Model in Deep Submicrometer Regime;
MOSFET衬底电流模型在深亚微米尺寸下的修正
3.
As a monitor of hot-carrier-injection reliability,the substrate current(ISUB)usually increases in high voltage transistors,but has only one peak in standard low voltage transistors.
基于泊松方程和幸运电子模型,推出了适用于高压n型器件衬底电流(ISUB)的公式,并且为模拟和实验测量的结果所验证。
6) buck voltage
衬底电压
补充资料：离子选择性电极(见电位分析法)
离子选择性电极(见电位分析法)
离子选择性电极见电位分析法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条