Modeling and simulation of single-electron devices by asymmetric tunneling capacitance

The external condition could induce the change of piezoelectric field in superlattices and further induce the change of tunneling current.

Results show that with the increment of doping level, the peak tunneling current density increases for GaInP/GaAs tandem solar cells, and the performance of GaInP tunnel junctions are much better than GaAs tunnel junctions.

The gate direct tunneling current in ultra-thin oxide is computed with different device parameters.

Quantum calculations of tunneling resistance in single electron transistors;

By considering two different ionization mechanisms: the tunneling ionization regime and the over the barrier ionization regime, it is found that the ionization behaviors are quite similar, while the high harmonic generation behaviors are very different.

For a magnetic tunneling junction with ferromagnetic metal/magnetic potential barrier layer/ferromagnetic metal structure,tunneling conductance,spin polarization and tunneling magneto resistance rate under zero bias voltage are calculated in a quasi-free electron model.