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1)  photo-and dark-conductivity
光、暗电导率
2)  Dark conductivity
暗电导率
1.
For obtaining high dark conductivity of p-type μc-Si∶H thin films with high crystalline volume fraction,the major processing parameters of the substrate temperature,hydrogen dilution ratio and boron doping ratio are primarily optimized by the method of orthogonal test.
Raman光谱和电导率测试结果表明:(1)在实验选取的参数范围内,衬底温度是影响薄膜暗电导率和晶化率的最主要因素,其次是氢稀释比,硼烷掺杂比的影响相对较小;(2)通过正交优化,获得了暗电导率为2。
2.
The microstructure ,morphology and electric property of thin films were investigated by XRD, SEM and dark conductivity measurements.
退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。
3.
The films are characterized and analyzed by Raman spectra,the effect of crystallization ratio on dark conductivity is investigated.
用Raman散射谱进行结构表征和分析,研究了薄膜晶化率对暗电导率的影响。
3)  dark-conductivity
无照导电性,暗导电率
4)  Optical conductivity
光电导率
1.
On this basis,some optical constants such as reflectivity,dielectric function,optical conductivity and energy-loss function were calculated.
在此基础上计算YbB6的反射率、介电函数、光电导率和能量损失函数等光学常数,结果与实验值符合比较好。
2.
A disscussion is given of the optical conductivity of decagonal quasicrystals.
讨论了十次对称准晶的光电导率,推导了十次对称准晶在周期方向和准周期平面不同的光电导率的计算公式,并以此计算了十次对称准晶AlCoCu的光电导率,得到了与实验值相当符合的结果。
5)  photoconductivity [英]['fəutəu,kɔndʌk'tiviti]  [美][,foto,kɑndʌk'tɪvətɪ]
光电导率
1.
The Steady state photoconductivity (PC) in iodine doping trans-polyacetylene (CH)x polymerized by modifying Naarmann method has been studied.
发现掺杂可使其光电导率比未掺杂的增大3~4个数量级;并且在较高的入射光强下,掺杂样品都出现饱和现象。
2.
In the OPTP experiment, it’s found that the terahertz transmission which is relevant to photoconductivity of sample decreased with the increased pump power in the same sample.
在对n-Si、p-Si及半绝缘GaAs进行光泵浦太赫兹探测的实验中,我们发现对于同一样品进行不同光泵浦能量的激励,泵浦能量越高,样品表面光电导率越大,THz信号的透过率也越低。
6)  dark conductivity
暗电导
1.
The microstructure and electric property of thin films were investigated by XRD and dark conductivity measurements.
利用X射线衍射仪(XRD)分析退火后的薄膜晶体结构,用电导率测试仪测试其暗电导率。
2.
Meanwhile the dark conductivity of intrinsic and doped films were also measured.
采用喇曼散射谱、扫描电子显微镜(SEM)和X-射线衍射(XRD)对掺磷硅薄膜的微结构进行了分析,并对掺杂前后薄膜的暗电导进行了测试,结果表明:掺磷后导致薄膜的非晶化。
补充资料:电导率(见电阻率)


电导率(见电阻率)
conductivity

d!日nd日O}已电导率(eonduetivity)见电阻率。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条