1) dark resistivity
暗电阻率
2) dark electric resistance
暗态电阻
3) resistance in the dark
暗电阻
4) Dark conductivity
暗电导率
1.
For obtaining high dark conductivity of p-type μc-Si∶H thin films with high crystalline volume fraction,the major processing parameters of the substrate temperature,hydrogen dilution ratio and boron doping ratio are primarily optimized by the method of orthogonal test.
Raman光谱和电导率测试结果表明:(1)在实验选取的参数范围内,衬底温度是影响薄膜暗电导率和晶化率的最主要因素,其次是氢稀释比,硼烷掺杂比的影响相对较小;(2)通过正交优化,获得了暗电导率为2。
2.
The microstructure ,morphology and electric property of thin films were investigated by XRD, SEM and dark conductivity measurements.
退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。
3.
The films are characterized and analyzed by Raman spectra,the effect of crystallization ratio on dark conductivity is investigated.
用Raman散射谱进行结构表征和分析,研究了薄膜晶化率对暗电导率的影响。
5) dark resistance
暗电阻，无照电阻
6) dark resistance
无照电阻;暗电阻
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条