1) room-temperature and low-field magnetoresistance
室温低场磁电阻
2) Low-field magnetic resistance at room temperature
低场室温磁电阻
3) low resistance at room temperature
室温低电阻
4) room temperature magnetoresistance
室温磁电阻
1.
Electrical behavior and enhancement of room temperature magnetoresistance induced by the Cu doping in La_(0.67)Ba_(0.33)MnO_3;
La_(0.67)Ba_(0.33)MnO_3中Cu掺杂对电特性和室温磁电阻的影响
2.
The experiment also showed that doping W can gradually increase the room temperature magnetoresistance of the material.
05时,样品的室温磁电阻迅速上升,从4%增加到10。
3.
4 T,the room temperature magnetoresistance increases from 5% to 15% when 0≤x≤ 12.
5%时,样品的室温磁电阻值从5%增大到15%,提高了200%。
5) low-field magnetoresistance
低场磁电阻
1.
The low-field magnetoresistance (LFMR) is mainly attributed to in.
样品的磁电阻是低场磁电阻效应,源于晶界处电子的自旋极化隧穿。
2.
The colossal magnetoresistance (CMR) effect and the low-field magnetoresistance (LFMR) of the electron-doped manganites La 1 -x Te x MnO 3 ( x =0.
实验结果表明 :在这种锰氧化物中同时存在庞磁阻 (CMR)效应和低场磁电阻 (LFMR)效应 。
补充资料：室温
1.室内温度。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条