1) Dividing in-plane field
分界面内场
2) critical in-plane field
临界面内场
1.
The method measuring critical in-plane field of hard bubbles was found.
同时,也证明了在临界面内场Hi(p1)时开始丢失VBL的OHB对应的是那些含VBL较少的OHB。
2.
It is found that there exists a critical in-plane field range of the VBLs annihilation in the walls of IDs at various temperatures from room temperature to T_0.
发现,从室温到T0范围内的任一不同温度下,ID畴壁中VBL的解体都存在一临界面内场范围[H(1)ipip(T)H(2)ip(T)时,VBL完全丢失。
3.
It was found that the critical in-plane fields change periodically when the crystal direction changes in plane,and their changes are opposite to the domain-erasing field.
实验研究了立方磁晶各向异性对面内场作用下非压缩状态的三类硬磁畴(普通硬磁泡(OHB)、第Ⅰ类哑铃畴(ID)和第Ⅱ类哑铃畴(IID))畴壁中垂直布洛赫线(VBL)的影响,发现对应于垂直布洛赫线消失的临界面内场的数值变化与磁畴消失场的数值变化规律相反,且该临界面内场的变化呈六重对称性。
3) interface of the first an d second cladding
内外包层分界面
4) interface scenario
界面场景
5) Interface electric field
界面电场
6) interface magnetic field
界面磁场
1.
On the basis of the theory on self-generated magnetic field, a target with two layers of different plasma densities is proposed to produce strong interface magnetic fields.
1、从激光等离子体相互作用中自生磁场产生机制出发,提出了设计双层密度靶来产生界面磁场的方案,并给出了相应的界面磁场的估计模型。
补充资料：分界
划分界线：～线ㄧ河北省和辽宁省在山海关～。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条