1) in-plane field
面内场
1.
The influence of in-plane field(H(1)ip) on stability of vertical Bloch lines(VBLs) in the walls of the hard domains at various bias fields(Hb) was studied.
实验研究了直流偏场(Hb)下,面内场(Hip)对液相外延石榴石磁泡薄膜的硬磁畴壁中垂直布洛赫线(VBL)稳定性的影响。
2.
The annihilating process of the first king of dumbbell domains(IDs) in garnet bubble films subjected to an in-plane field H_(ip) was studied experimentally.
实验研究了直流偏场(Hb)和面内场(Hip)联合作用下,液相外延石榴石磁泡薄膜中第Ⅰ类哑铃畴(ID)畴壁中垂直布洛赫线(VBL)的解体。
3.
Annihilation procession of vertical-Bloch-line chains in the walls of second kind of dumbbell domains produced by multi-branched-domains subjected to an in-plane field was investigated experimentally.
实验研究了面内场作用下枝状畴形成的第2类哑铃畴(IID)畴壁中垂直布洛赫线(VBL)链的解体过程。
2) in plane field
面内场
1.
Annihilation procession of verticl Bloch line chains in the first kind of dumbbell domain wall subjected to both static bias field and in plane field was investigated experimentally.
研究了直流偏场和面内场联合作用下第 类哑铃畴畴壁中 VBL链的消失 ,即软化过程 。
3) in-plane magnetic field
面内磁场
4) critical in-plane field
临界面内场
1.
The method measuring critical in-plane field of hard bubbles was found.
同时,也证明了在临界面内场Hi(p1)时开始丢失VBL的OHB对应的是那些含VBL较少的OHB。
2.
It is found that there exists a critical in-plane field range of the VBLs annihilation in the walls of IDs at various temperatures from room temperature to T_0.
发现,从室温到T0范围内的任一不同温度下,ID畴壁中VBL的解体都存在一临界面内场范围[H(1)ipip(T)面内场Hip的增大,VBL丢失得越来越多;当Hip>H(2)ip(T)时,VBL完全丢失。
3.
It was found that the critical in-plane fields change periodically when the crystal direction changes in plane,and their changes are opposite to the domain-erasing field.
实验研究了立方磁晶各向异性对面内场作用下非压缩状态的三类硬磁畴(普通硬磁泡(OHB)、第Ⅰ类哑铃畴(ID)和第Ⅱ类哑铃畴(IID))畴壁中垂直布洛赫线(VBL)的影响,发现对应于垂直布洛赫线消失的临界面内场的数值变化与磁畴消失场的数值变化规律相反,且该临界面内场的变化呈六重对称性。
5) Dividing in-plane field
分界面内场
补充资料：不看金面看佛面
1.同"不看僧面看佛面"。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条