1) Pulse Plasma Enhance Chemical Vapor Deposition
脉冲等离子增强化学气相沉积
2) very-high-frequency plasma-enhanced chemical vapor deposition
超高频等离子体增强化学气相沉积
1.
Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper.
采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术,实现了微晶硅硅薄膜的高速沉积,并通过改变气体总流量改变气体滞留时间,考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响。
4) Direct current plasma enhanced chemical vapour deposition
直流等离子体增强化学气相沉积
5) PECVD
等离子体增强化学气相沉积
1.
The Effect of Repeated Ar~+ Bombardment on the Corrosion Resistance of Plasma-enhanced Chemical Vapour Deposited (PECVD) TiN Film;
循环氩离子轰击对等离子体增强化学气相沉积(PECVD)TiN膜耐腐蚀性能的影响
2.
Facet Antireflection Coatings Deposited by PECVD;
等离子体增强化学气相沉积端面减反膜的研究
3.
High Quality ZnO Thin Films Grown by PECVD from Metal Organic Zinc and Carbon Dioxide Mixture Gas Sources;
用锌金属有机源和二氧化碳等离子体增强化学气相沉积的方法制备高质量氧化锌薄膜
6) PECVD
等离子增强化学气相沉积
1.
The stoichiometry exist in a-CH(N) films, and a-CH(N) films are consisted of C3N4 crystallite phase and CN x matrix which is identified as predominantly sp2 bonded structure.
采用射频－直流等离子增强化学气相沉积技术用Ｃ２Ｈ２和Ｎ２气的混合气体制备出ａ－Ｃ∶Ｈ（Ｎ）薄膜，用ＴＥＭ、红外谱、ＸＰＳ等多种分析测试手段研究了薄膜的结构。
2.
To meet the requirement for the diamond-like carbon thin films with low friction factor,the tungsten-doped diamond-like carbon(W-DLC)thin films prepared through PECVD were studied in depth.
为了满足制备较厚低摩擦系数类金刚石薄膜(DLC)耐磨镀层的实际需求,对在等离子增强化学气相沉积的类金刚石薄膜(W-DLC)中掺钨进行了系统研究。
3.
TiO_2/V_2O_5 double-layer thin films have been prep ared on a silicon and a porcelain tube with gold comb-type electrodes by means o f plasma enhanced chemical vapour deposition (PECVD)technique and sol-gel proc ess with TiCl 4 and V 2O 5 as the precursors.
报道了以TiCl4 和V2 O5为源 ,采用等离子增强化学气相沉积 (PECVD)和溶胶 -凝胶 (sol-gel)技术制备了TiO2 /V2 O5双层薄膜 ,将该薄膜沉积在带有金梳状电极的陶瓷管和硅片上 ,进行了X射线衍射(XRD)分析 ,并且测量其对三甲基胺 (TMA)的气敏特性。
补充资料：脉冲
1.指电流或电压短暂的起伏变化。各种高频脉冲广泛用在无线电技术中。 2.指变化规律类似电脉冲的现象。如脉冲激光器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条