1) a-GaN
a面GaN
1.
Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition
利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
2) m-plane GaN
m面GaN
1.
Structural and optical in-plane anisotropy of m-plane GaN~3;
m面GaN平面内结构和光学各向异性研究
4) GaN (0001) surface
GaN(0001)表面
5) GaN/Si(001) interface
GaN/Si(001)界面
6) gallium nitride
GaN
1.
Development of Ion-implantation Research in Gallium Nitride Material;
GaN材料中离子注入的研究进展
2.
Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride;
离子注入GaN的光学和电学特性研究
3.
Based on Chin’s theory,which describes the concentration and compensation ratio dependencies of the low-field mobility in gallium nitride in wide concentration ranges (1016~1020cm-3) at room temperature,an analytic model for the compensation ratio of unintentionally doped GaN at room temperature has been obtained.
用数值方法将室温n型GaN补偿度θ表示为Caughey-Thomas解析模型函数。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条