1) RuO2·nH2O film
氧化钌薄膜
2) Film oxidation
薄膜氧化
3) ruthenate thin film
钌酸盐薄膜
4) RuO2-based thick film resistor
二氧化钌基厚膜电阻器
5) ruthenium oxide
氧化钌
1.
Preparation and characterization of porous ruthenium oxide coatings as cathode material of hybrid capacitor;
混合电容器多孔氧化钌阴极涂层的制备与表征
2.
Effect of impurity ions on electrochemical super-capacitive properties of amorphous hydrated ruthenium oxide
杂质离子对非晶态水合氧化钌电化学超电容性能的影响
3.
Various ruthenium oxides(denoted as RuOx·nH2O) grown by cyclic voltammetry(CV) on Ta substrate were systematically studied for the application of electrochemical capacitors(EC).
研究了用循环伏安法在钽基体上制备电化学电容器用的氧化钌(记为RuOx。
6) Ruthenium dioxide
二氧化钌
1.
Experiment results indicate that in process of preparing hydrate of ruthenium dioxide by hydrolyzing chlororuthenium acid many factors such as conentration of hydrolytic ruthenium ,temperature and pH value have influence on RaO2 productivity, specific suface, square resistance and temperature coefficient of resistance.
氯钌酸水解制备水合二氧化钌过程中,水解浓度、温度、pH值、洗涤对产率、比表面、方阻值、电阻温度系数都有影响,但终点pH值是影响二氯化钌性能的主要因素。
补充资料:一氧化硅薄膜介质材料
分子式:
CAS号:
性质:黑褐色无定型固体膜。介电常数5。比(电)容40~100pF/mm2,电容温度系数(40~400) ×10-6,介质损耗因数tgδ(1~4) ×10-2,击穿场强1×108V/m。与基片附着性能良好。采用真空蒸发法制取。用在混合集成电路中。用于制作薄膜电容器介质、薄膜电阻器和隔离层、光电池用增透膜。
CAS号:
性质:黑褐色无定型固体膜。介电常数5。比(电)容40~100pF/mm2,电容温度系数(40~400) ×10-6,介质损耗因数tgδ(1~4) ×10-2,击穿场强1×108V/m。与基片附着性能良好。采用真空蒸发法制取。用在混合集成电路中。用于制作薄膜电容器介质、薄膜电阻器和隔离层、光电池用增透膜。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条