1) dual-bandgap
双带隙
1.
A novel dual-bandgap structure using dumbbell-shaped Defected Ground Structure(DGS) is presented in this paper.
本文介绍了一种用哑铃形的DGS(defected ground structure)结构实现双带隙的方法。
2) double-stopband-tuned
双频率带隙
3) DP-EBG
双面电磁带隙结构
4) band gap
带隙
1.
Effect of translation group symmetry on phononic band gaps studied by supercell calculation;
超元胞方法研究平移群对称性对声子带隙的影响
2.
Influence of scatterers′ tropism on the band gaps of two-dimension phononic crystal;
散射体的取向对二维声子晶体带隙的影响(英文)
3.
Elastic wave band gap and scattering in phononic crystal;
声子晶体中弹性波带隙与散射
5) bandgap
['bændɡæp]
带隙
1.
Precise Bandgap Voltage Reference and Current Reference;
一种高精度的带隙基准电压源及电流源
2.
Design of low temperature drift bandgap voltage reference and driving circuit;
低温漂带隙基准源及驱动电路设计
3.
A method to estimate the strain state of SiGe/Si by measuring the bandgap;
带隙法测定SiGe/Si材料的应变状态
6) Band-gap
带隙
1.
It is concluded that compared with simple lattices, the band-gap of complex lattices.
结果表明,与简单格子相比,复式格子的带隙出现在频率相对较低的位置;在f=0·091—0·6046范围内,将声子晶体排列为复式格子要优于简单格子,可以得到更宽带隙。
2.
First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.
使用第一性原理和赝势方法研究了Ge_(50)Sn_(50)有序合金直到9 GPa压力下的能带结构和带隙的压力依赖性。
3.
In this paper, on basis of the analysis of the foregoing band-gap voltage reference ,a self-start low-voltage low-power band-gap voltage reference is proposed in which TSMC 0.
35μm CMOS工艺,基于对传统带隙基准电路的分析,利用MOS管的亚阈特性,设计了一种低压低功耗的带自举的带隙基准电压源。
补充资料：双[1-(4-二甲氨基)苯基2-苯基1,2-二硫代乙烯合镍]
分子式：
CAS号：
性质：紫黑色单斜晶体。熔点277～278℃。溶于苯、甲苯、三氯甲烷等大多数有机溶剂。红外频率υ(C＝S)1190、1165、1140cm-1,红外频率υ(S-C-C-S)880cm-1。由对二甲氨基安息香、五硫化二磷在二噁烷(二氧六环)中反应后,加入镍(Ⅱ)盐溶液制得。用作光学非线性材料。
CAS号：
性质：紫黑色单斜晶体。熔点277～278℃。溶于苯、甲苯、三氯甲烷等大多数有机溶剂。红外频率υ(C＝S)1190、1165、1140cm-1,红外频率υ(S-C-C-S)880cm-1。由对二甲氨基安息香、五硫化二磷在二噁烷(二氧六环)中反应后,加入镍(Ⅱ)盐溶液制得。用作光学非线性材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条