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1)  fracture zone
隙带
1.
Research and application of the technique of stopping the drainage hole quickly by chemical method in the structure fracture zone;
应用化学法在构造裂隙带快速封堵抽放钻孔技术的研究与应用
2)  band gap
带隙
1.
Effect of translation group symmetry on phononic band gaps studied by supercell calculation;
超元胞方法研究平移群对称性对声子带隙的影响
2.
Influence of scatterers′ tropism on the band gaps of two-dimension phononic crystal;
散射体的取向对二维声子晶体带隙的影响(英文)
3.
Elastic wave band gap and scattering in phononic crystal;
声子晶体中弹性波带隙与散射
3)  bandgap ['bændɡæp]
带隙
1.
Precise Bandgap Voltage Reference and Current Reference;
一种高精度的带隙基准电压源及电流源
2.
Design of low temperature drift bandgap voltage reference and driving circuit;
低温漂带隙基准源及驱动电路设计
3.
A method to estimate the strain state of SiGe/Si by measuring the bandgap;
带隙法测定SiGe/Si材料的应变状态
4)  Band-gap
带隙
1.
It is concluded that compared with simple lattices, the band-gap of complex lattices.
结果表明,与简单格子相比,复式格子的带隙出现在频率相对较低的位置;在f=0·091—0·6046范围内,将声子晶体排列为复式格子要优于简单格子,可以得到更宽带隙。
2.
First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.
使用第一性原理和赝势方法研究了Ge_(50)Sn_(50)有序合金直到9 GPa压力下的能带结构和带隙的压力依赖性。
3.
In this paper, on basis of the analysis of the foregoing band-gap voltage reference ,a self-start low-voltage low-power band-gap voltage reference is proposed in which TSMC 0.
35μm CMOS工艺,基于对传统带隙基准电路的分析,利用MOS管的亚阈特性,设计了一种低压低功耗的带自举的带隙基准电压源。
5)  energy gap
带隙
1.
Optical parameters of GaInP were measured by using null ellipsometric spectrum method in the visible light region at room temperature The dependencies of refractive index and absorption coefficient for three samples on the energy of photons were obtained, and the result was analyzed and discussed The positions of energy gap of three samples were give
利用消光式椭圆偏振光谱法 ,在室温下可见光区对光电子材料镓铟磷的光学参数进行了测量 ,得到该材料的折射率和吸收系数随光子能量的变化关系曲线 ,并对结果进行了分析和讨论 ,给出了镓铟磷带隙的位
2.
The energy gap Eg and the value of energy Eg+Δ 0 were obtained.
对其结果进行了讨论,给出了带隙Eg和跃迁Eg+Δ0的能量值,Δ0的实验值与计算值符合的很好。
3.
The energy gap is 0.
1eV的价带;导带部分主要是由Zn的4s态贡献的,O的2p态在该区域内具有微弱的贡献;ZnO是一种直接宽禁带半导体,导带底和价带顶位于布里渊区中心处,带隙为0。
6)  Band gap structure
带隙结构
1.
Study of two dimensional photonic band gap structure;
二维光子晶体带隙结构的研究
2.
Change of band gap structure of 1-D photonic crystal of periodic positive-negative index structure at angular incidence;
含正负介质光子晶体在角度入射情况下的带隙结构变化
3.
With the boundary conditions satisfied by the electromagnetic fields in the interface between the crystal and the clad,the characteristic equation to describe the band gap structure is deduced.
根据电磁场在包层边界应满足的基本关系,建立了描述其带隙结构的特征方程,给出了特征方程迭代求解的算法描述,为电磁波传播特性数值仿真分析提供了理论基础。
补充资料:间接带隙(见半导体的能带结构)


间接带隙(见半导体的能带结构)
indirect band gap

  I’ed接带隙indireet band gap见半导体的能带结构。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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