1) Process-induced strain
工艺致应变
2) process-induced uniaxial stress
工艺致单轴应变
1.
After summarizing the deficiencies of substrate-induced biaxial stress technology compared with process-induced uniaxial stress and the advantages of process-induced uniaxial stress,the performance improvement of MOS devices is introduced,which use two kinds of process-induced uniaxial stress based on t.
阐述了在MOS器件中使用衬底致双轴应变后器件性能的改善,在总结了与工艺致单轴应变相比衬底致双轴应变的不足以及工艺致单轴应变的优势之后,讲述了基于SiGe源漏和基于双应力线的两种工艺致单轴应变技术及其对MOS器件性能的提高。
3) process induced strain
工艺过程应变
4) densification technique
致密工艺
1.
Principles of electro-magnetic compaction of metal powder and its densification technique;
金属粉末电磁压制基本机理及致密工艺
5) residual strain/technological stress
残余应变/工艺应力
补充资料：工艺
①将原材料或半成品加工成产品的工作、方法、技术等：～复杂ㄧ～精细。②手工艺：～品。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条