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1)  breaking strain
致断应变
2)  magnetic-field-induced strain
磁致应变
1.
The surface morphology,compositions and microstructures of the films were investigated and the magnetic-field-induced strain was measured.
采用直流磁控溅射的方法,在NaC l基底上沉积了N i-Mn-Ga薄膜,对薄膜进行了形貌观察、微区成分及结构分析,并测量了薄膜的磁致应变。
2.
The effects of microamount additions of RE(Tb, Sm) on the martensitic transition and the magnetic-field-induced strains of highly textured polycrystalline Ni-Mn-Ga alloys were investigated,and the effects of pre-compressive stress on the magnetic-field-induced strains of the alloys were studied especially.
研究了稀土元素Tb和Sm对Ni-Mn-Ga磁性形状记忆合金的马氏体相变及磁致应变的影响,并着重研究了预加压应力对合金磁致应变的影响作用。
3.
The martensitic transformation and the magnetic-field-induced strain (MFIS) of melt-spun ribbons were investigated.
采用快淬技术制备了非化学计量比的Ni47Mn32Ga21薄带合金,研究了快淬合金的形状记忆效应和磁致应变。
3)  electric-field-induced strain
场致应变
1.
The electric-field-induced strain in Rh-doped BaTiO-3 single crystals increases with increasing ageing time at 80℃.
系统地研究了掺铑的BaTiO3单晶在老化后的场致应变性能。
4)  electrostriction [i,lektrəu'strikʃən]
电致应变
1.
Effect of Lanthanum-doping on electrostriction and temperature-stability of PMN-based ceramics;
掺La对PMN基陶瓷电致应变及其温度稳定性的影响
2.
The results indicate that the Cure Temperature T_m, maximum dielectric constant ε_(max) and electrostriction strain S_(max) and the hysteresis increases as well as the diffuse phase transition δ decreases with PT content increased.
采用熔盐法制备了不同成分的Pb(Mg1/3Nb2/3)O3 PbTiO3二元系固溶体陶瓷,并研究了PbTiO3成分变化对该体系的介电性能、电致应变和电滞回线的影响。
5)  bending strain
弯致应变
1.
Fiber Bragg gratings with bending strain induced wavelength tuning range of 48 nm;
可调谐48nm弯致应变光纤光栅
6)  Mutate effect
致变效应
补充资料:磁致电阻


磁致电阻
Magnetoresistance

磁致电阻(magnetoresistanee 磁致电阻是对载流的导体或半导体加上磁场H时所产生的电阻变化。磁致电阻是磁场电效应的一种。它在磁场H平行于和垂直于电流时都可观察到。电阻的变化通常与H“成正比,但是在非常大的磁场中,它变成与H成正比。参阅“磁场电效应”(galvanomagnetie effeets)条。 在大多数金属中,电阻的变化是正的;然而,在贵金属和过渡金属的合金以及在饱和以上的铁磁体中,电阻的变化一般是负的。 在半导体中,磁致电阻非常大(特别在锑化姻中),并且相对于单晶体中电流的方向具有大的各向异性。后一性质对于确定带结构很有价值。对磁致电阻的测量还可提供有关载流子迁移率的知识。 仁亚伯拉罕斯(E.Abrahams)、凯弗(F·Keffer)撰]
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