2) Mn doping
Mn掺杂
1.
Furthermore,the Mn doping was demonstrated to be able to improve the electrochemical performances of the cathodes.
Mn掺杂的Li3Fe2(PO4)3样品的恒电流充放电测试和伏安循环测试(2~4V)发现,所有样品中Fe3+/Fe2+氧化还原电对均有两个稳定的充放电平台(2。
3) Mn-doped ZnO
Mn掺杂ZnO
1.
Structure and Magnetism of Mn-doped ZnO Nanocrystals Annealed at Different Temperature;
不同退火温度下Mn掺杂ZnO纳米晶的结构和磁性
2.
Optical Properties and Magnetism of Mn-doped ZnO Nanocrystals;
Mn掺杂ZnO纳米晶的光学和磁学性质研究
4) Mn-doping
Mn掺杂
1.
The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film, indicating that the structure of the films was not disturbed by Mn-doping and the film also had mainly (103) peaks.
通过脉冲激光沉积(PLD)法在SiO2基片上制备了不同含量的Mn掺杂ZnO薄膜。
2.
Mn-doped Ga2O3 thin films with different contents Mn-doping are deposited on Si(111) and glass substrates by magnetron sputtering method.
采用磁控溅射法在Si(111)和玻璃衬底上制备出不同Mn掺杂含量的Ga2O3薄膜,使用扫描电子显微镜、电子能谱仪、X射线衍射仪、紫外-可见分光光度计等对Mn掺杂Ga2O3薄膜的表面形貌、结晶特性和光吸收性能进行了研究。
5) Ga_(1-x)Mn_xN
Mn掺杂GaN
1.
The results reveal a 100% spin polarized impurity band in band structure of Ga_(1-x)Mn_xN due to hybridization of Mn 3d and N 2p orbitals.
计算结果表明Mn掺杂GaN使得Mn 3d与N2p轨道杂化,产生自旋极化杂质带,材料表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料,折射率在带隙处出现峰值,紫外区光吸收系数随Mn浓度的增加而增大。
6) doping at Mn site
Mn位掺杂
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条