1) SRAM single-transistor DRAM
单晶体管DRAM
2) unijunction transistor
单结晶体管
1.
The unijunction transistor influence the AVR pre-exiting performance;
单结晶体管对励磁调压器起励性能的影响
2.
This paper presents a new electronic relay consisting of unijunction transistors.
介绍了一种多功能电子继电器，它采用单结晶体管构成，具有短路速断动作、过流反时限延时动作、缺相延时动作等功能，体积小，功耗低，动作灵敏，价格低，适用于各种电力设备尤其是电机负载。
5) single electron transistor
单电子晶体管
1.
Quantum calculations of tunneling resistance in single electron transistors;
单电子晶体管隧穿电阻的量子计算
2.
A numerical analysis of the I-V property of single electron transistors;
单电子晶体管I-V特性数值分析
3.
The successful fabrication of Si based single electron transistors (SETs) on P type SIMOX substrates,by using electron beam (EB) lithography and reactive ion etching (RIE) processes is reported in this paper.
采用电子束光刻技术和反应离子刻蚀等工艺 ,在 P型 SIMOX硅片上成功地制备了一种单电子晶体管。
6) single-electron transistor
单电子晶体管
1.
Si single-electron transistor with in-plane point-contact metal gates;
点接触平面栅型硅单电子晶体管
2.
Based on I-V characteristics of single-electron transistor and the idea of MOS digital circuit design,an inverter using the single-electro and MOS transistors is proposed and some other logic gate circuits are educed.
基于单电子晶体管的I-V特性和MOS晶体管的逻辑电路设计思想,提出了1个单电子晶体管和MOS晶体管混合的反相器电路,进而推导出其它基本逻辑门电路,并最终实现了一个半加器电路。
3.
Based on the I-V characteristics of hybrid structure of double-input single-electron transistor and MOSFET and the concepts of digital integrated circuit design,a comparator,which consists of 5 double-gate SETs and 6 MOSFETs,is proposed.
基于双输入单电子晶体管与MOSFET的混合结构I-V特性和数字电路的逻辑设计思想,提出了一种由5个双栅极SET和6个MOSFET构成的一位比较器电路结构。
补充资料：单晶
分子式：
CAS号：
性质：参见多晶
CAS号：
性质：参见多晶
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