1) positive grid current
正栅电流
2) forward gate current
正向栅极电流
3) positive grid current
正栅流
4) negative grid current
反栅流;负栅电流
5) Gate current
栅电流
1.
Comparisons are made for gate current behavior between nMOSFET and pMOSFET high-k gate stack structures.
介绍了一种纳米MOSFET(场效应管)栅电流的统一模型,该模型基于Schr dinger-Poisson方程自洽全量子数值解,特别适用于高k栅介质和多层高k栅介质纳米MOSFET。
2.
It is found that in a certain range of gate voltage V_g, the gate current I_g follows the Fowler-Nordheim-like tunneling mechanism, and the experimental tunneling barrier _b is 0.
发现在一定的栅电压Vg范围内,软击穿后的栅电流Ig符合Fowler-Nordheim隧穿公式,但室温下隧穿势垒b的平均值仅为0·936eV,远小于Si/SiO2界面的势垒高度3·15eV。
3.
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
在该模型的基础上 ,研究了采用不同高介电常数栅介质材料时MOSFET的栅电流与介质材料的介电常数、禁带宽度及和Si导带不连续等参数之间的关系 。
6) screen-grid current
屏栅电流
补充资料：正向
1.定向。 2.房屋坐北面南为正向。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条