1) gate-contact leakage current
栅结漏电流
2) gate-leakage current
栅漏电流
1.
The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs.
随着MOSFET尺寸的不断减小,栅漏电流对器件特性的影响日益明显。
3) gate leakage current
栅极漏电流
4) tunneling leakage current
栅隧穿漏电流
1.
The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime.
结果表明 ,同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ,前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 。
5) gate-oxide leakage current
栅氧化层漏电流
1.
By simultaneously reducing subthreshold and gate-oxide leakage currents in dominio logic circuits,the proposed technique improve the performance and the power consumption of the circuits as compared to the dual threshold voltage dominio logic circuits with NMOS sleep transistors.
使用这种电路设计技术,可以同时减小多米诺逻辑电路中的亚阈值漏电流和栅氧化层漏电流,与带有NMOS休眠管的双阈值电压多米诺逻辑电路比较,可以改善电路性能和功耗。
6) gate induced drain leakage current
栅极感应漏极漏电流
补充资料：反向漏电流（inverseleakagecurrent）
反向漏电流（inverseleakagecurrent）
流过处于反向工作的pn结的微小电流称为反向漏电流。理想pn结反向漏电流中还包括体内扩散电流与空间电荷区产生电流两部分，硅pn结空间电荷区产生电流起支配作用。反向漏电流的大小与组成pn结的半导体材料禁带宽度呈指数关系，反向漏电流中还包括表面漏电流，表面漏电流的大小与pn结制作工艺密切相关。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条