1) thin-film resistor chips
薄膜电阻组件
2) platinum thin film elements
薄膜铂电阻元件
1.
In this article, the writer introduced the basic constructions and the main technology of platinum thin film elements,and raised his suggestions for how to using and testing these elements.
在介绍了薄膜铂电阻元件的基本结构和主要生产工艺的基础上,对如何合理和正确使用与检测薄膜铂电阻元件,提出了意见和建议。
3) thick-film resistor chips
厚膜电阻组件
4) resistive films
电阻薄膜
1.
Electrical stability of Cr-Si-Ni resistive films in acidic and alkaline aqueous solutions;
Cr-Si-Ni电阻薄膜在酸碱溶液环境中的电学稳定性
2.
Effect of nitrogen on crystallization behavior and electrical properties of Cr-Si-Al resistive films;
氮元素对Cr-Si-Al电阻薄膜晶化行为及电性能的影响
3.
Crystallization and oxidation behaviors of Cr-Si-Ni-N resistive films;
Cr-Si-Ni-N电阻薄膜的晶化与氧化特性
5) resistive film
电阻薄膜
1.
Electrical stability and degradation mechanism of CrSi(Ni,Al) resistive films in alkaline aqueous environments;
碱性溶液环境中CrSi(Ni,Al)电阻薄膜的电学稳定性及劣化机理
2.
In order to select suitable materials for resistive films, microstructures of NiCr O and Cr Si sputtered films used for the mid range of resistance were analyzed.
合金成分、沉积条件以及热处理工艺是影响薄膜性能极其重要的因素 ,为便于电阻薄膜的合理选材 ,分析了应用于中阻值范围内的 Ni Cr- O系及 Cr- Si系溅射薄膜的膜层结构 ,对比了它们在热处理前后的电性能变化情况 ,并通过短期试验考核它们在应用中劣化的可能性 。
3.
Cr-Si-Ni resistive films were prepared on n-type Si (100) substrates by magnetron sputtering.
采用磁控溅射方法在Si(100)基底上制备了CrSiNi电阻薄膜,研究了不同温度退火时薄膜微观结构的转变过程以及对电阻率的影响。
6) film resistor
薄膜电阻
1.
Various GaAs MMIC (monolithic microwave integrated circuit) passive components,including rectangle spiral inductors,MIM capacitors,and film resistors,are fabricated,and their equivalent circuit models are established.
制作了不同结构参数的GaAsMMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用。
2.
Through analyzing the operating principles of the micro thermal sensor, associating with thin film resistor and the substrate, we got TCR of the resistor, and analyzed the method of calculation and measurement of the TCR and the resistively of MEMS thermal sensor.
应用微型热敏传感器薄膜电阻的电阻温度系数设计方法,得到基于热敏电阻的电阻温度系数的计算和设计参数。
补充资料：氮化钽电阻薄膜
分子式：
CAS号：
性质：一种钽基中低阻薄膜。主成分为氮化钽。具有熔点高(3090℃)、电阻温度系数小和稳定性高的特点。电阻率180～220μΩ/cm，方阻50～100Ω，TCR<-50×10-6/℃。采用溅射法工艺制备。用于制作中低阻薄膜元件。
CAS号：
性质：一种钽基中低阻薄膜。主成分为氮化钽。具有熔点高(3090℃)、电阻温度系数小和稳定性高的特点。电阻率180～220μΩ/cm，方阻50～100Ω，TCR<-50×10-6/℃。采用溅射法工艺制备。用于制作中低阻薄膜元件。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条