1) P-i-n diode
PIN型二极管
2) PIN diodes
PIN二极管
1.
5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm.
基于中国科学院微电子研究所的GaAspin二极管工艺,设计、制作并测试了一种单片单刀双掷开关。
2.
The model of the state of forward bias and reverse bias of PIN diodes is fabricated using RF simulation software ADS(advanced design system),and the method of optimizing the key parameter of phase shifter using the sensitivity analysis module of ADS is also discussed.
利用射频仿真软件ADS(Advanced Design System)构建了PIN二极管的正反偏模型,讨论了运用ADS的灵敏度分析模块辅助优化移相器关键参数的方法,并基于该方法设计出了一种X波段四位数字移相器,其工作频率为9。
3.
GaAs PIN diodes with different structures are fabricated,testing data of PIN diodes with usual and improved structures are compared,and the results of analysis in theory are proved.
设计并制作了高性能GaAs微波PIN二极管。
3) pin diode
PIN二极管
1.
Effect of temperature on power response of PIN diode limiter;
温度对PIN二极管限幅器功率响应特性的影响
2.
Overshoot phenomena in PIN diode under EMP with fast rise time;
快上升沿电磁脉冲作用下PIN二极管中的电流过冲现象
3.
Wide band GaAs PIN diode SPST switch MMIC is presented in this paper.
采用GaAs PIN二极管,完成1~26。
4) GaAs PIN diodes
GaAs PIN二极管
1.
GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented.
报道了一种适用于X波段的低损耗高隔离度开关的GaAs PIN二极管。
5) Si-PIN
Si-PIN二极管
6) PIN silicon photodiode
PIN型硅光电二极管
补充资料：(1S)-(-)-pin-2-en-4-one
CAS: 1196-01-6
分子式: C10H14O
分子质量: 150.22
沸点: 227-228℃
中文名称: 4,6,6-三甲基二环[3.1.1]庚-3-烯-2-酮
英文名称: 4,6,6-trimethyl-bicyclo[3.1.1]hept-3-en-2-one ；6,6-trimethyl- (1s)-bicyclo[3.1.1]hept-3-en-2-onl(-)-verbenone；(1S)-(-)-pin-2-en-4-one
分子式: C10H14O
分子质量: 150.22
沸点: 227-228℃
中文名称: 4,6,6-三甲基二环[3.1.1]庚-3-烯-2-酮
英文名称: 4,6,6-trimethyl-bicyclo[3.1.1]hept-3-en-2-one ；6,6-trimethyl- (1s)-bicyclo[3.1.1]hept-3-en-2-onl(-)-verbenone；(1S)-(-)-pin-2-en-4-one
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条