1) concentration of stacking faults
堆跺层错密度
3) interlayer packing density
层间堆垛密度
4) stacking fault
堆垛层错
1.
The formation of twin structure depends on the slip of stacking fault for nucleating and extending.
孪晶结构的形成依靠堆垛层错的滑移运动而形核和扩展。
2.
Moreover, the stacking faults penetrate the reinforcement.
利用透射电镜和高分辨率透射电镜研究了原位合成钛基复合材料增强体 Ti B的堆垛层错结构 。
3.
Based on slip line and stacking fault appeared on the silicon surface,the dislocation theory is used to analyze the reasons of causing dislocation and stacking fault during the bending process and study their influence on the laser bending,according to the experiment of thin silicon laser bending.
基于开展的薄硅片长脉冲激光弯曲成形实验,针对弯曲样品表面产生的滑移线和堆垛层错缺陷,结合实验所用规格硅片弯曲角度不超过35°的现象,运用位错理论分析在弯曲过程中硅晶体产生位错、层错现象的原因以及位错对激光弯曲成形的影响。
5) stacking faults
堆垛层错
1.
Asymmetries of stacking faults in MOVPE grown GaN/GaAs(001);
立方相GaN外延层中堆垛层错的非对称性
6) gle stacking fault plane
低角度堆垛层错面
补充资料：堆垛层错
见面缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条