2) cut through temperature
软化击穿温度
3) gate oxide soft breakdown
栅氧化层软击穿
1.
The failure mechanism of gate oxide soft breakdown (as MOSFETs main failure mode) under electromagnetic pulse stress is analyzed,and it is obtained that this agrees to degradation failure model based on stochastic process.
通过分析电磁脉冲应力下,栅氧化层软击穿(MOS器件主要失效模式)的失效机理,得出结论:它符合基于随机过程的退化失效模型。
4) Soft breakdown
软击穿
1.
Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown;
超薄栅氧化层n-MOSFET软击穿后的导电机制
2.
The characteristics of the gate current (I_g) and substrate current (I_b) of ultra-thin gate oxides (≤3nm) after soft breakdown (SBD) are studied.
0nm)软击穿(softbreakdown,SBD)后的栅电流和衬底电流特性。
3.
Results show that soft breakdown of HfO_2gate dielectrics happened both under constant voltage stress and constant current stress.
当栅氧化层很薄时会发生软击穿现象,软击穿和通常的硬击穿是不同的现象。
5) soft breakdown
软性击穿
6) cut-through temperature
切通温度、软化击穿温度
补充资料：荷重软化温度
分子式：
分子量：
CAS号：
性质：又称荷重变形温度，简称荷重软化点。耐火材料在恒定荷重下，对高温和荷重共同作用的抵抗性能，可通过实验方法测出。
分子量：
CAS号：
性质：又称荷重变形温度，简称荷重软化点。耐火材料在恒定荷重下，对高温和荷重共同作用的抵抗性能，可通过实验方法测出。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条