Quantum calculations of tunneling resistance in single electron transistors;

A numerical analysis of the I-V property of single electron transistors;

The successful fabrication of Si based single electron transistors (SETs) on P type SIMOX substrates,by using electron beam (EB) lithography and reactive ion etching (RIE) processes is reported in this paper.

Si single-electron transistor with in-plane point-contact metal gates;

Based on I-V characteristics of single-electron transistor and the idea of MOS digital circuit design,an inverter using the single-electro and MOS transistors is proposed and some other logic gate circuits are educed.

Based on the I-V characteristics of hybrid structure of double-input single-electron transistor and MOSFET and the concepts of digital integrated circuit design,a comparator,which consists of 5 double-gate SETs and 6 MOSFETs,is proposed.

The structures, principles, characters and applications of single electron transistors are clarified,based on the traditional theories.

Based on an equivalent circuit for single electron transistors, the electrostatic energy on the charges is deduced.

A few novel single electron transistors are discussed in details, which have more chance to be used to construct next generation electronics with new system architectures.

A digital filter hardware implement with single-electron transistors;

A Full Adder Realization with Complementary Single-Electron Transistors;

Realization and output characteristics analysis of the multiple islands single-electron transistors;