Fluorinated amorphous hydrogenated carbon(a-C∶F∶H) thin films were deposited by RF plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF_4 and CH_4 as source gases at different RF-power and deposition temperatures and annealed in N_2 atmosphere.

The influence of different RF-power on the crystal structures,surface morphologies and optical properties of ZnO thin films fabricatied on ITO(In_2O_3:Sn)substrates was investigated.

Amorphous fluorinated carbon films were deposited by PECVD using CH 4 and CF 4 as source gases at different RF-power.

Results show that the radio frequency power and the pressure in the reaction chamber are two main factors that affect the depositing rate distribution of PECVD and both are constrained by the linear relationship p = kW.

Effect of RF power on the structure and properties of diamond-like carbon films;

Design of RF Power LDMOS Device;

The influence of RF power and oxygen ratio on the grain size,the residual stress and optical properties was investigated by X-ray diffraction and transmission spectra.

The fluorinated diamond-like carbon(F-DLC) films were prepared by reactive magnetron sputtering under different radio-frequency power with trifluoromethane (CHF_3) and argon(Ar) as source gases and pure graphite as a target.