1) radio frequency power meter
射频功率表
2) RF-power
射频功率
1.
Fluorinated amorphous hydrogenated carbon(a-C∶F∶H) thin films were deposited by RF plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF_4 and CH_4 as source gases at different RF-power and deposition temperatures and annealed in N_2 atmosphere.
本文使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C∶F∶H)薄膜,并在N2气氛中进行了不同温度的退火处理。
2.
The influence of different RF-power on the crystal structures,surface morphologies and optical properties of ZnO thin films fabricatied on ITO(In_2O_3:Sn)substrates was investigated.
结果表明,随着射频功率的提高,沿(002)方向生长的ZnO薄膜的结晶度显著增强,薄膜的表面颗粒略有减小,表面粗糙度由13。
3.
Amorphous fluorinated carbon films were deposited by PECVD using CH 4 and CF 4 as source gases at different RF-power.
以CH4和CF4的混合气体作源气体,利用等离子体增强型化学气相沉积法(PECVD),改变射频功率,制备了一批氟化非晶碳薄膜样品。
3) radio frequency power
射频功率
1.
Results show that the radio frequency power and the pressure in the reaction chamber are two main factors that affect the depositing rate distribution of PECVD and both are constrained by the linear relationship p = kW.
结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳。
4) RF power
射频功率
1.
Effect of RF power on the structure and properties of diamond-like carbon films;
射频功率对类金刚石薄膜结构和性能的影响
2.
Design of RF Power LDMOS Device;
射频功率LDMOS器件设计
3.
The influence of RF power and oxygen ratio on the grain size,the residual stress and optical properties was investigated by X-ray diffraction and transmission spectra.
通过XRD和透射光谱研究了射频功率和氧气比例对ZnO薄膜的晶粒尺度、应力状态和光学性能的影响。
5) radio-frequency power
射频功率
1.
The fluorinated diamond-like carbon(F-DLC) films were prepared by reactive magnetron sputtering under different radio-frequency power with trifluoromethane (CHF_3) and argon(Ar) as source gases and pure graphite as a target.
以高纯石墨作靶、氩气(Ar)和三氟甲烷(CHF3)为源气体,用反应磁控溅射法在不同射频功率下制备了氟化类金刚石碳(F-DLC)膜,并对其疏水性进行研究。
6) RF power LDMOS
射频功率LDMOS
1.
A RF power LDMOS with a trench drift region is optimally designed.
对射频功率LDMOS槽形漂移区的结构进行了优化设计。
2.
A novel buried n layer partial SOI RF power LDMOS is proposed.
提出了具有n埋层PSOI(部分SOI)结构的射频功率LDMOS器件。
3.
A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is p roposed.
提出了具有n埋层pSOI三明治结构的射频功率LDMOS器件。
补充资料：肺癌经皮肿瘤内射频治疗
肺癌经皮肿瘤内射频治疗
介入放射学技术。在经皮穿刺活检技术上发展起来的一种用高频电磁波治疗肺癌的方法。在活检以后，通过保留的穿刺针将高频电磁场导入肿瘤内施行辐射，射频电磁波在生物介质中产生的热及非热效应可凝固癌组织，杀死癌细胞。根据肿瘤的大小，可分别采取单点和多点辐射，使肿瘤破坏更彻底。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条