1) grain size
结晶粒度
2) crystallite size
晶粒粒度
1.
Variation of the crystallite size of compounds hydrothermally synthesized and the relationship between the crystallite size and the synthesis conditions,such as the form of the used precursor,hydrothermal reaction temperature and time,were investigated.
任一种化合物晶粒粒度都不可能通过改变水热反应条件而无限制地减小。
3) particle size
晶粒粒度
1.
Influence of OH -/SiO 2 ratio (alkalinity) on the particle size distribution and structure of the β zeolite synthesized during a shorter crystallization period (60 h) has been studied.
β沸石是一种固体酸催化剂，其晶粒粒度及分布对催化性能有着显著的影响［６］，研究在不同碱度条件下合成的β沸石的晶粒粒度分布及结构是十分必要的。
2.
The main factors affecting particle size are analyzed from the view of the rate of nucleation.
认为成核过程主要包括生长基元的形成和生长基元之间的脱水反应过程，并从成核速度的角度分析了影响晶粒粒度的主要原因。
3.
The effects of stripping temperature, the initial iron concentration in the organic phase and the initial pH of the water phase on the nanoparticle size were investigated by means of XRD and TEM.
结果表明,有机相中的铁浓度、水热反萃温度的提高和水相pH值的降低均有利于晶粒粒度的增大,杂质H_2PO_4~-的引入大幅度降低了氧化铁粉末粒度。
4) recrystallized grains
再结晶晶粒
1.
Effects of solution treatment temperature on the recrystallized grains,the second phases,electrical conductivity and tensile properties of cold rolled Al-1.
结果表明:合金在520℃~560℃之间进行固溶处理时,随着固溶温度的升高,其再结晶晶粒尺寸变化不大,而第二相粒子的数量明显减少;且固溶态合金的伸长率也随着固溶温度的升高而增大,560℃固溶后伸长率最大。
5) grain structure
晶粒结构
1.
The factors affecting the quality of phosphorized copper anode used for acidic copper electroplating were discussed, including materials, grain structure, phosphorous content and cleaning of anode surface.
主要探讨了影响电镀铜用磷铜阳极质量的因素,包括原材料、铜晶粒结构、磷含量及阳极表面的清洁。
2.
The comparison shows that the thermal etching carried out at a temperature lower than the sintering temperature can obviously reveal the grain structure of Al_2O_3 matrix.
比较表明，在低于烧结温度约１５０℃下进行的热腐蚀能够清晰地揭示基质Ａｌ２Ｏ３的晶粒结构，并且与化学的效果不同，保留了金属相粒子。
3.
The grain structure,the crystallographic orientation and the grain boundary character of Al interconnects were measured by using electron backscatter diffraction technique.
采用电子背散射衍射技术(EBSD),测量了微电子器件中A l互连线的晶粒结构、晶体学取向和晶界特征。
补充资料：Assembly晶粒封装
以树酯或陶瓷材料，将晶粒包在其中，以达到保护晶粒，隔绝环境污染的目的，而此一连串的加工过程，即称为晶粒封装（assembly）。封装的材料不同，其封装的作法亦不同，本公司几乎都是以树酯材料作晶粒的封装，制程包括：芯片切割→晶粒目检→晶粒上「架」（导线架，即lead frame）→焊线→模压封装→稳定烘烤（使树酯物性稳定）→切框、弯脚成型→脚沾锡→盖印→完成。以树酯为材料之ic，通常用于消费性产品，如计算机、计算器，而以陶瓷作封装材料之ic，属于高性赖度之组件，通常用于飞弹、火箭等较精密的产品上。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条