1) H2 impurity
氢杂质，氢沾污
2) impurity contamination
杂质沾污
3) Metallicimpurity contaminant
金属杂质沾污
4) hydrogenic impurity
类氢杂质
1.
Effects of hydrogenic impurity on localized excitons in In_xGa_(1-x)N/GaN quantum dots;
类氢杂质对束缚激子基态能和结合能的影响
2.
The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.
通过在波函数中考虑量子线的限制方向和非限制方向的相关性 ,计算了 Ga As/ Ga1 - x Alx As量子阱线中类氢杂质的束缚能和光致电离截面 。
5) hydrogenic-like impurity
类氢杂质
1.
Binding energy of a hydrogenic-like impurity in GaN/Al_xGa_(1-x)N quantum dots;
GaN/Al_xGa_(1-x)N量子点中类氢杂质的结合能
2.
Concerning the domino effect of the built-in electric field and the three-dimension confinement,exciton states with hydrogenic-like impurity confined in GaN/AlxGa1-xN quantum dots(QDs) are studied by means of a variational approach within the framework of effective-mass approximation.
在有效质量近似框架内,运用变分方法,考虑内建电场效应和量子点的三维约束效应,研究了含类氢杂质的G aN/A lxG a1-xN量子点中的激子态。
6) hydrogenic-donor impurity
类氢杂质
1.
Studied the binding energies of a hydrogenic-donor impurity in a cylindrically symmetric GaAs/GaAlAs-coupled quantum disk in the presence of a uniform magnetic field for different disk and barrier thicknesses,disk radii,and donor ion positions within the disk.
在有效质量近似下,采用简单的变分波函数,定量计算了无限深对称GaAs/AlGaAs耦合双量子盘在沿轴向不同强度磁场的作用下,类氢杂质体系的基态束缚能随量子盘的半径、中心垒厚、盘厚度的变化。
2.
We report the binding energies of a hydrogenic-donor impurity in a cylindrically symmetric GaAs/Ga_(0.
6)As耦合双量子盘中类氢杂质体系的基态束缚能。
补充资料：杂质
1.一种物质中夹杂的其它物质。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条